Datasheet > TC74AC10F_12

TC74AC10F_12

更新时间： 2024-09-15 12:22:59

品牌	Logo	应用领域
东芝 - TOSHIBA		栅
页数	文件大小	规格书
7页	244K
描述
Triple 3-Input NAND Gate

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中文翻译

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数据手册

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TC74AC10F_12 数据手册

TC74AC10P/F

TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic

TC74AC10P,TC74AC10F

Triple 3-Input NAND Gate

TC74AC10P

The TC74AC10 is an advanced high speed CMOS 3-INPUT

NAND GATE fabricated with silicon gate and double-layer metal

wiring C²MOS technology.

It achieves the high speed operation similar to equivalent

Bipolar Schottky TTL while maintaining the CMOS low power

dissipation.

The internal circuit is composed of 3 stages including buffer

output, which provide high noise immunity and stable output.

All inputs are equipped with protection circuits against static

discharge or transient excess voltage.

TC74AC10F

Features

•

High speed: t = 5.0 ns (typ.) at V

= 5 V

Low power dissipation: I

= 4 μA (max) at Ta = 25°C

High noise immunity: V

= V

= 28% V

(min)

NIH

NIL

Symmetrical output impedance: |I | = I

= 24 mA (min)

Capability of driving 50 Ω

transmission lines.

Weight

DIP14-P-300-2.54

SOP14-P-300-1.27A

∼

−

pHL

•

Balanced propagation delays: t

pLH

: 0.96 g (typ.)

: 0.18 g (typ.)

Wide operating voltage range: V

(opr) = 2 to 5.5 V

Pin and function compatible with 74F10

Pin Assignment

2012-02-29

12 3 4 5 6 7

中文翻译

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