Datasheet > TC6215

TC6215

更新时间： 2024-09-16 14:56:03

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美国微芯 - MICROCHIP		/
页数	文件大小	规格书
14页	792K
描述
TC6215 consists of high voltage, low threshold N-channel and P-channel MOSFETs in an 8-Lead SOIC (

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TC6215 数据手册

TC6215

N-Channel and P-Channel Enhancement-Mode Dual MOSFETs

Features

General Description

• Back-to-Back, Gate-Source Zener Diodes

• Guaranteed R_DS(ON)at 4V Gate Drive

• Low Threshold

The TC6215 consists of high-voltage, low-threshold

N-channel and P-channel MOSFETs in an 8-lead SOIC

(TG) package. Both MOSFETs have integrated

back-to-back gate-source Zener diode clamps and

guaranteed R_DS(ON)ratings down to 4V gate drive,

allowing them to be driven directly with standard

5V CMOS logic.

• Low On-resistance

• Independent N-channel and P-channel

• Electrically Isolated N-channel and P-channel

• Low Input Capacitance

These

(normally-off) transistors utilize an advanced vertical

DMOS structure and well-proven silicon-gate

low-threshold

Enhancement-mode

• Fast Switching Speeds

• Free from Secondary Breakdowns

• Low Input and Output Leakage

manufacturing process. This combination produces

devices with the power handling capabilities of bipolar

transistors and the high input impedance and positive

temperature coefficient inherent in MOS devices.

Characteristic of all MOS structures, these devices are

free from thermal runaway and thermally induced

secondary breakdown.

Applications

• High-voltage Pulsers

• Amplifiers

• Buffers

Microchip’s vertical DMOS FETs are ideally suited for a

wide range of switching and amplifying applications

where very low threshold voltage, high breakdown

voltage, high input impedance, low input capacitance,

and fast switching speeds are desired.

• Piezoelectric Transducer Drivers

• General Purpose Line Drivers

• Logic-level Interfaces

Package Type

8-lead SOIC

(Top view)

See Table 3-1 for pin information.

 2022 Microchip Technology Inc. and its subsidiaries

DS20005776A-page 1

12 3 4 5 6 7...14

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