Datasheet > TC59YM916AMG24A

TC59YM916AMG24A

更新时间： 2025-10-10 21:22:23

品牌	Logo	应用领域
东芝 - TOSHIBA		动态存储器内存集成电路
页数	文件大小	规格书
74页	1202K
描述
IC 32M X 16 RAMBUS, PBGA108, LEAD FREE, CSP-108, Dynamic RAM

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技术参数
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TC59YM916AMG24A 技术参数

是否无铅：	不含铅	生命周期：	Active
零件包装代码：	BGA	包装说明：	TBGA,
针数：	108	Reach Compliance Code：	unknown
ECCN代码：	EAR99	HTS代码：	8542.32.00.28
风险等级：	5.7	访问模式：	BLOCK ORIENTED PROTOCOL
其他特性：	SELF CONTAINED REFRESH	JESD-30 代码：	R-PBGA-B108
JESD-609代码：	e1	内存密度：	536870912 bit
内存集成电路类型：	RAMBUS DRAM	内存宽度：	16
功能数量：	1	端口数量：	1
端子数量：	108	字数：	33554432 words
字数代码：	32000000	工作模式：	SYNCHRONOUS
组织：	32MX16	封装主体材料：	PLASTIC/EPOXY
封装代码：	TBGA	封装形状：	RECTANGULAR
封装形式：	GRID ARRAY, THIN PROFILE	认证状态：	Not Qualified
座面最大高度：	1.2 mm	自我刷新：	YES
最大供电电压 (Vsup)：	1.86 V	最小供电电压 (Vsup)：	1.74 V
标称供电电压 (Vsup)：	1.8 V	表面贴装：	YES
技术：	CMOS	端子面层：	TIN SILVER COPPER
端子形式：	BALL	端子节距：	1.27 mm
端子位置：	BOTTOM	Base Number Matches：	1

TC59YM916AMG24A 数据手册

TC59YM916AMG24A,32A,32B,40B

TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC

Lead Free

Overview

The Rambus XDR^TMDRAM device is a general purpose high-performance memory device suitable for use in a

broad range of applications including computer memory, graphics, video, and any other application where high

bandwidth and low latency are required.

The 512Mb Rambus XDR DRAM device is a CMOS DRAM organized as 32M words by 16 bits. The use of

Differential Rambus Signaling Level (DRSL) technology permits 4000/3200/2400 Mb/s transfer rates while using

conventional system and board design technologies. XDR DRAM devices are capable of sustained data transfers of

8000/6400/4800 MB/s.

XDR DRAM device architecture allows the highest sustained bandwidth for multiple, interleaved randomly

addressed memory transactions. The highly efficient protocol yields over 95% utilization while allowing fine access

granularity. The device's 8 banks support up to four interleaved transactions.

Features

•

Highest pin bandwidth available

• 4000/3200/2400 Mb/s Octal Data Rate (ODR) Signaling

• Bi-directional differential RSL (DRSL)

- Flexible read/write bandwidth allocation

- Minimum pin count

• Programmable on-chip termination

-Adaptive impedance matching

-Reduced system cost and routing complexity

•

Highest sustained bandwidth per DRAM device

• 8000/6400/4800 MB/s sustained data rate

• 8 banks: bank-interleaved transactions at full bandwidth

• Dynamic request scheduling

• Early-Read-after-Write support for maximum efficiency

• Zero overhead refresh

•

Low latency

• 2.0/2.5/3.33 ns request packets

• Point-to-point data interconnect for fastest possible flight time

• Support for low-latency, fast-cycle cores

Low power

• 1.8V V

• Programmable small-swing I/O signaling (DRSL)

• Low power PLL/DLL design

• Power Down Self Refresh support

• Dynamic clock gating and per pin I/O Power Down

•

Lead Free

Note: XDR is a trademark or a registered trademark in Japan and/or other countries.

2003-07-10 1/74

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与TC59YM916AMG24A相关器件

型号	品牌	获取价格	描述	数据表
TC59YM916AMG32B	TOSHIBA	获取价格	IC 32M X 16 RAMBUS, PBGA108, LEAD FREE, CSP-108, Dynamic RAM
TC59YM916AMG40B	TOSHIBA	获取价格	IC 32M X 16 RAMBUS, PBGA108, LEAD FREE, CSP-108, Dynamic RAM
TC59_13	MICROCHIP	获取价格	Low Dropout, Negative Output Voltage Regulator
TC5A	TOPSTEK	获取价格	Topstek Current Transducer
TC5A4V	TOPSTEK	获取价格	Topstek Current Transducer
TC5C-006.4M	CONNOR-WINFIELD	获取价格	HCMOS Output Clock Oscillator, 6.4MHz Nom, ROHS COMPLIANT, MINIATURE, CERAMIC, SMD, 10 PIN
TC5C-009.72M	CONNOR-WINFIELD	获取价格	HCMOS Output Clock Oscillator, 9.72MHz Nom, ROHS COMPLIANT, MINIATURE, CERAMIC, SMD, 10 PI
TC5C-010.0M	CONNOR-WINFIELD	获取价格	HCMOS Output Clock Oscillator, 10MHz Nom, ROHS COMPLIANT, MINIATURE, CERAMIC, SMD, 10 PIN
TC5C-012.5M	CONNOR-WINFIELD	获取价格	HCMOS Output Clock Oscillator, 12.5MHz Nom, ROHS COMPLIANT, MINIATURE, CERAMIC, SMD, 10 PI
TC5C-013.5M	CONNOR-WINFIELD	获取价格	HCMOS Output Clock Oscillator, 13.5MHz Nom, ROHS COMPLIANT, MINIATURE, CERAMIC, SMD, 10 PI

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