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TC58512FT

更新时间： 2024-11-10 22:49:55
品牌 Logo 应用领域
东芝 - TOSHIBA 存储内存集成电路光电二极管栅可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数 文件大小 规格书
43页 422K
描述
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS

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中文翻译

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TC58512FT 技术参数

生命周期：Obsolete零件包装代码：TSOP1
包装说明：TSOP1, TSSOP48,.8,20针数：48
Reach Compliance Code：unknownECCN代码：3A991.B.1.B.1
HTS代码：8542.32.00.51风险等级：5.77
Is Samacsys：N最长访问时间：35 ns
命令用户界面：YES数据轮询：NO
JESD-30 代码：R-PDSO-G48长度：18.4 mm
内存密度：536870912 bit内存集成电路类型：EEPROM
内存宽度：8功能数量：1
部门数/规模：4K端子数量：48
字数：67108864 words字数代码：64000000
工作模式：ASYNCHRONOUS最高工作温度：70 °C
最低工作温度：组织：64MX8
封装主体材料：PLASTIC/EPOXY封装代码：TSOP1
封装等效代码：TSSOP48,.8,20封装形状：RECTANGULAR
封装形式：SMALL OUTLINE, THIN PROFILE页面大小：512 words
并行/串行：SERIAL电源：3.3 V
编程电压：3 V认证状态：Not Qualified
就绪/忙碌：YES座面最大高度：1.2 mm
部门规模：16K最大待机电流：0.0001 A
子类别：Flash Memories最大压摆率：0.03 mA
最大供电电压 (Vsup)：3.6 V最小供电电压 (Vsup)：2.7 V
标称供电电压 (Vsup)：3.3 V表面贴装：YES
技术：CMOS温度等级：COMMERCIAL
端子形式：GULL WING端子节距：0.5 mm
端子位置：DUAL切换位：NO
类型：NAND TYPE宽度：12 mm
Base Number Matches：1

TC58512FT 数据手册

 浏览型号TC58512FT的Datasheet PDF文件第2页浏览型号TC58512FT的Datasheet PDF文件第3页浏览型号TC58512FT的Datasheet PDF文件第4页浏览型号TC58512FT的Datasheet PDF文件第5页浏览型号TC58512FT的Datasheet PDF文件第6页浏览型号TC58512FT的Datasheet PDF文件第7页 
TC58512FT  
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS  
512-MBIT (64M ´ 8 BITS) CMOS NAND E2PROM  
DESCRIPTION  
The TC58512 is a single 3.3 V 512-Mbit (553,648,128) bit NAND Electrically Erasable and Programmable  
2
Read-Only Memory (NAND E PROM) organized as 528 bytes ´ 32 pages ´ 4096 blocks. The device has a 528-byte  
static register which allows program and read data to be transferred between the register and the memory cell array  
in 528-byte increments. The Erase operation is implemented in a single block unit (16 Kbytes + 512 bytes: 528 bytes  
´ 32 pages).  
The TC58512 is a serial-type memory device which utilizes the I/O pins for both address and data input/output as  
well as for command inputs. The Erase and Program operations are automatically executed making the device most  
suitable for applications such as solid-state file storage, voice recording, image file memory for still cameras and  
other systems which require high-density non-volatile memory data storage.  
FEATURES  
·
Organization  
·
·
·
Power supply  
V
= 2.7 V to 3.6 V  
CC  
Memory cell allay 528 ´ 128K ´ 8  
Program/Erase Cycles 1E5 cycle (with ECC)  
Access time  
Register  
Page size  
Block size  
528 ´ 8  
528 bytes  
Cell array to register 25 ms max  
(16K + 512) bytes  
Serial Read Cycle  
Operating current  
Read (50 ns cycle)  
Program (avg.)  
Erase (avg.)  
50 ns min  
·
·
Modes  
·
Read, Reset, Auto Page Program  
Auto Block Erase, Status Read  
Multi Block Program, Multi Block Erase  
Mode control  
10 mA typ.  
10 mA typ.  
10 mA typ.  
100 mA  
Standby  
Serial input/output  
·
Package  
Command control  
TSOPI48-P-1220-0.50 (Weight: 0.53 g typ.)  
PIN ASSIGNMENT (TOP VIEW)  
PIN NAMES  
NC  
NC  
1
48  
47  
46  
45  
44  
43  
42  
41  
40  
39  
38  
37  
36  
35  
34  
33  
32  
31  
30  
29  
28  
27  
26  
25  
NC  
I/O1 to I/O8  
CE  
I/O port  
2
NC  
NC  
3
NC  
NC  
Chip enable  
NC  
NC  
4
5
I/O8  
I/O7  
I/O6  
I/O5  
NC  
WE  
Write enable  
Read enable  
Command latch enable  
Address latch enable  
Write protect  
Ready/Busy  
GND  
RY/BY  
RE  
6
7
RE  
8
CE  
9
CLE  
NC  
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
21  
22  
23  
24  
NC  
NC  
NC  
ALE  
V
V
V
CC  
SS  
CC  
SS  
V
WP  
NC  
NC  
NC  
NC  
NC  
RY/BY  
GND  
CLE  
ALE  
WE  
WP  
NC  
I/O4  
I/O3  
I/O2  
I/O1  
NC  
Ground input  
Power supply  
Ground  
V
CC  
NC  
NC  
NC  
V
SS  
NC  
NC  
NC  
NC  
000707EBA1  
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general  
can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer,  
when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid  
situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to  
property.  
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most  
recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide  
for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc..  
· The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal  
equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are  
neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or  
failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control  
instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control  
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document  
shall be made at the customer’s own risk.  
· The products described in this document are subject to the foreign exchange and foreign trade laws.  
· The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by  
TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its  
use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or  
others.  
· The information contained herein is subject to change without notice.  
2001-03-05 1/43  
1234567...43

中文翻译

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