生命周期: | Obsolete | 零件包装代码: | QFP |
包装说明: | LQFP, QFP100,.63X.87 | 针数: | 100 |
Reach Compliance Code: | unknown | ECCN代码: | 3A991.B.2.A |
HTS代码: | 8542.32.00.41 | 风险等级: | 5.84 |
最长访问时间: | 5 ns | 其他特性: | PIPELINED ARCHITECTURE |
最大时钟频率 (fCLK): | 133 MHz | I/O 类型: | COMMON |
JESD-30 代码: | R-PQFP-G100 | JESD-609代码: | e0 |
长度: | 20 mm | 内存密度: | 4718592 bit |
内存集成电路类型: | CACHE SRAM | 内存宽度: | 36 |
功能数量: | 1 | 端子数量: | 100 |
字数: | 131072 words | 字数代码: | 128000 |
工作模式: | SYNCHRONOUS | 最高工作温度: | 85 °C |
最低工作温度: | -40 °C | 组织: | 128KX36 |
输出特性: | 3-STATE | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | LQFP | 封装等效代码: | QFP100,.63X.87 |
封装形状: | RECTANGULAR | 封装形式: | FLATPACK, LOW PROFILE |
并行/串行: | PARALLEL | 电源: | 2.5/3.3,3.3 V |
认证状态: | Not Qualified | 座面最大高度: | 1.7 mm |
最大待机电流: | 0.003 A | 最小待机电流: | 3.1 V |
子类别: | SRAMs | 最大压摆率: | 0.34 mA |
最大供电电压 (Vsup): | 3.6 V | 最小供电电压 (Vsup): | 3.1 V |
标称供电电压 (Vsup): | 3.3 V | 表面贴装: | YES |
技术: | CMOS | 温度等级: | INDUSTRIAL |
端子面层: | TIN LEAD | 端子形式: | GULL WING |
端子节距: | 0.65 mm | 端子位置: | QUAD |
宽度: | 14 mm | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
TC55V4400FT-10 | TOSHIBA |
获取价格 |
4.194,304-WORD BY 4-BIT CMOS STATIC RAM | |
TC55V4400FT-12 | TOSHIBA |
获取价格 |
4.194,304-WORD BY 4-BIT CMOS STATIC RAM | |
TC55V4400FT-15 | TOSHIBA |
获取价格 |
4.194,304-WORD BY 4-BIT CMOS STATIC RAM | |
TC55V8128BFT | ATMEL |
获取价格 |
Supports the ATmega2560, ATmega1280 and ATmega640 | |
TC55V8128BFT-10 | TOSHIBA |
获取价格 |
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS | |
TC55V8128BFT-12 | TOSHIBA |
获取价格 |
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS | |
TC55V8128BFT-15 | TOSHIBA |
获取价格 |
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS | |
TC55V8128BFT-8 | TOSHIBA |
获取价格 |
IC 128K X 8 CACHE SRAM, 8 ns, PDSO32, 0.400 INCH, 0.80 MM PITCH, PLASTIC, TSOP2-32, Static | |
TC55V8128BJ | ATMEL |
获取价格 |
Supports the ATmega2560, ATmega1280 and ATmega640 | |
TC55V8128BJ/BFT-8 | TOSHIBA |
获取价格 |
TC55V8128BJ/BFT-8 |