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TC4452VOA

更新时间： 2024-02-27 02:39:11
品牌 Logo 应用领域
美国微芯 - MICROCHIP 驱动器MOSFET驱动器驱动程序和接口接口集成电路光电二极管
页数 文件大小 规格书
22页 801K
描述
12A High-Speed MOSFET Drivers

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中文翻译

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TC4452VOA 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Active零件包装代码：DIP
包装说明：DIP, DIP8,.3针数：8
Reach Compliance Code：compliantECCN代码：EAR99
HTS代码：8542.39.00.01风险等级：2.18
高边驱动器：NO接口集成电路类型：BUFFER OR INVERTER BASED MOSFET DRIVER
JESD-30 代码：R-PDIP-T8JESD-609代码：e3
长度：9.46 mm功能数量：1
端子数量：8最高工作温度：125 °C
最低工作温度：-40 °C标称输出峰值电流：13 A
封装主体材料：PLASTIC/EPOXY封装代码：DIP
封装等效代码：DIP8,.3封装形状：RECTANGULAR
封装形式：IN-LINE峰值回流温度（摄氏度）：NOT APPLICABLE
电源：4.5/18 V认证状态：Not Qualified
座面最大高度：4.32 mm子类别：MOSFET Drivers
最大供电电压：18 V最小供电电压：4.5 V
标称供电电压：5 V表面贴装：NO
温度等级：AUTOMOTIVE端子面层：Matte Tin (Sn)
端子形式：THROUGH-HOLE端子节距：2.54 mm
端子位置：DUAL处于峰值回流温度下的最长时间：NOT APPLICABLE
宽度：7.62 mmBase Number Matches：1

TC4452VOA 数据手册

 浏览型号TC4452VOA的Datasheet PDF文件第2页浏览型号TC4452VOA的Datasheet PDF文件第3页浏览型号TC4452VOA的Datasheet PDF文件第4页浏览型号TC4452VOA的Datasheet PDF文件第5页浏览型号TC4452VOA的Datasheet PDF文件第6页浏览型号TC4452VOA的Datasheet PDF文件第7页 
TC4451/TC4452  
12A High-Speed MOSFET Drivers  
Features  
General Description  
• High Peak Output Current: 13A (typ.)  
The TC4451/TC4452 are single-output MOSFET  
drivers. These devices are high-current buffer/drivers  
capable of driving large MOSFETs and Insulated Gate  
Bipolar Transistors (IGBTs). The TC4451/TC4452 have  
matched output rise and fall times, as well as matched  
leading and falling-edge propagation delay times. The  
TC4451/TC4452 devices also have very low cross-  
conduction current, reducing the overall power  
dissipation of the device.  
• Low Shoot-Through/Cross-Conduction Current in  
Output Stage  
• Wide Input Supply Voltage Operating Range:  
- 4.5V to 18V  
• High Continuous Output Current: 2.6A (max.)  
• Matched Fast Rise and Fall Times:  
- 21 ns with 10,000 pF Load  
- 42 ns with 22,000 pF Load  
These devices are essentially immune to any form of  
upset, except direct overvoltage or over-dissipation.  
They cannot be latched under any conditions within  
their power and voltage ratings. These parts are not  
subject to damage or improper operation when up to  
5V of ground bounce is present on their ground  
terminals. They can accept, without damage or logic  
upset, more than 1.5A inductive current of either  
polarity being forced back into their outputs. In addition,  
all terminals are fully protected against up to 4 kV of  
electrostatic discharge.  
• Matched Short Propagation Delays: 44 ns (typ.)  
• Low Supply Current:  
- With Logic ‘1’ Input – 140 μA (typ.)  
- With Logic ‘0’ Input – 40 μA (typ.)  
• Low Output Impedance: 0.9Ω (typ.)  
• Latch-Up Protected: Will Withstand 1.5A Output  
Reverse Current  
• Input Will Withstand Negative Inputs Up To 5V  
• Pin-Compatible with the TC4420/TC4429,  
TC4421/TC4422 and TC4421A/TC4422A  
MOSFET Drivers  
The TC4451/TC4452 inputs may be driven directly  
from either TTL or CMOS (3V to 18V). In addition,  
300 mV of hysteresis is built into the input, providing  
noise immunity and allowing the device to be driven  
from slowly rising or falling waveforms.  
• Space-Saving, Thermally-Enhanced, 8-Pin DFN  
Package  
Applications  
With both surface-mount and pin-through-hole  
packages, in addition to a wide operating temperature  
range, the TC4451/TC4452 family of 12A MOSFET  
drivers fit into most any application where high gate/line  
capacitance drive is required.  
• Line Drivers for Extra Heavily-Loaded Lines  
• Pulse Generators  
• Driving the Largest MOSFETs and IGBTs  
• Local Power ON/OFF Switch  
• Motor and Solenoid Driver  
• LF Initiator  
© 2006 Microchip Technology Inc.  
DS21987A-page 1  
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中文翻译

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TC4452VOA 替代型号

型号 品牌 替代类型 描述 数据表
TC4452VPA MICROCHIP

完全替代

 12A High-Speed MOSFET Drivers
MIC4452YM MICROCHIP

类似代替

 12A BUF OR INV BASED MOSFET DRIVER, PDSO8
MIC4451YM MICROCHIP

类似代替

 12A BUF OR INV BASED MOSFET DRIVER, PDSO8

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