TC255P

更新时间： 2024-02-12 00:06:24

品牌	Logo	应用领域
德州仪器 - TI		传感器换能器图像传感器
页数	文件大小	规格书
18页	243K
描述
336- 】 244-pixel ccd image sensor

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

TC255P 技术参数

生命周期：	Obsolete	包装说明：	2.54 MM PITCH, WINDOWED, PLASTIC, DIP-8
Reach Compliance Code：	unknown	风险等级：	5.55
Is Samacsys：	N	其他特性：	ELECTRONIC SHUTTER
阵列类型：	FRAME TRANSFER	主体宽度：	10 mm
主体高度：	3.35 mm	主体长度或直径：	10 mm
动态范围：	66 dB	水平像素：	324
外壳：	PLASTIC	安装特点：	THROUGH HOLE MOUNT
最大工作电流：	10 mA	最高工作温度：	55 °C
最低工作温度：	-10 °C	输出类型：	ANALOG VOLTAGE
封装形状/形式：	SQUARE	像素大小：	10X10 µm
电源：	13 V	灵敏度（V / lx.s）：	0.045 V/lx.s
传感器/换能器类型：	IMAGE SENSOR,CCD	子类别：	CCD Image Sensors
最大供电电压：	13 V	最小供电电压：	11 V
表面贴装：	NO	端接类型：	SOLDER
垂直像素：	243	Base Number Matches：	1

TC255P 数据手册

TC255P

336- × 244-PIXEL CCD IMAGE SENSOR

SOCS057 – JUNE 1996

DUAL-IN-LINE PACKAGE

(TOP VIEW)

• Medium-Resolution, Solid-State Image

Sensor for Low-Cost B/W TV Applications

• 324(H) x 243(V) Active Elements in Image

IAG2

ADB

ABG

IAG1

Sensing Area

• 10-µm Square Pixels

• Fast Clear Capability

• Electronic Shutter Function From

1/60–1/50000 s

• Low Dark Current

SUB

OUT

SAG

SRG

• Electron-Hole Recombination Antiblooming

• Dynamic Range . . . 66 dB Typical

• High Sensitivity

• High Blue Response

• 8-Pin Dual-In-Line Plastic Package

• 4-mm Image-Area Diagonal

• Solid-State Reliability With No Image

Burn-In, Residual Imaging, Image

Distortion, Image Lag, or Microphonics

• High Photoresponse Uniformity

description

The TC255P is a frame-transfer charge-coupled device (CCD) designed for use in B/W NTSC TV and special-

purpose applications where low cost and small size are desired.

The image-sensing area of the TC255P is configured in 243 lines with 336 elements in each line. Twelve

elements are provided in each line for dark reference. The blooming-protection feature of the sensor is based

on recombining excess charge with charge of opposite polarity in the substrate. This antiblooming is activated

by supplying clocking pulses to the antiblooming gate, which is an integral part of each image-sensing element.

The sensor can be operated in a noninterlace mode as a 324(H) by 243(V) sensor with low dark current. The

device can also be operated in an interlace mode, electronically displacing the image-sensing elements during

the charge integration in alternate fields, and effectively increasing the vertical resolution and minimizing

aliasing.

One important aspect of this image sensor is its high-speed image-transfer capability. This capability allows for

an electronic-shutter function comparable to interline-transfer and frame-interline-transfer sensors without the

loss of sensitivity and resolution inherent in those technologies.

The charge is converted to signal voltage with a 12-µV per electron conversion factor by a high-performance

charge-detection structure with built-in automatic reset and a voltage-reference generator. The signal is

buffered by a low-noise two-stage source-follower amplifier to provide high output-drive capability.

The TC255P uses TI-proprietary virtual-phase technology, which provides devices with high blue response, low

dark signal, high photoresponse uniformity, and single-phase clocking. The TC255P is characterized for

operation from –10°C to 45°C.

This MOS device contains limited built-in gate protection. During storage or handling, the device leads should be shorted together

or the device should be placed in conductive foam. In a circuit, unused inputs should always be connected to SUB. Under no

circumstances should pin voltages exceed absolute maximum ratings. Avoid shorting OUTn to ADB during operation to prevent

damage to the amplifier. The device can also be damaged if the output terminals are reverse-biased and an excessive current is

allowed to flow. Specific guidelines for handling devices of this type are contained in the publication Guidelines for Handling

Electrostatic-Discharge-Sensitive (ESDS) Devices and Assemblies available from Texas Instruments.

PRODUCTION DATA information is current as of publication date.

Products conform to specifications per the terms of Texas Instruments

standard warranty. Production processing does not necessarily include

testing of all parameters.

2-1

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

12 3 4 5 6 7...18

中文翻译

下载PDF

与TC255P相关器件

型号	品牌	获取价格	描述	数据表
TC2571	TRANSCOM	获取价格	1 W Low-Cost Packaged PHEMT GaAs Power FETs
TC2574	TELCOM	获取价格	0.5A Step-Down Switching Regulator
TC2574-12.0VPA	MICROCHIP	获取价格	1.8 A SWITCHING REGULATOR, 63 kHz SWITCHING FREQ-MAX, PDIP8, PLASTIC, DIP-8
TC2574-12.0VPA	TELCOM	获取价格	0.5A Step-Down Switching Regulator
TC2574-12.0VPA	ROCHESTER	获取价格	1.8A SWITCHING REGULATOR, 63kHz SWITCHING FREQ-MAX, PDIP8, PLASTIC, DIP-8
TC2574-3.3VPA	TELCOM	获取价格	0.5A Step-Down Switching Regulator
TC2574-3.3VPA	ROCHESTER	获取价格	1.8A SWITCHING REGULATOR, 63kHz SWITCHING FREQ-MAX, PDIP8, PLASTIC, DIP-8
TC2574-3.3VPA	MICROCHIP	获取价格	1.8 A SWITCHING REGULATOR, 63 kHz SWITCHING FREQ-MAX, PDIP8, PLASTIC, DIP-8
TC2574-5.0VPA	TELCOM	获取价格	0.5A Step-Down Switching Regulator
TC2574-5.0VPA	ROCHESTER	获取价格	1.8A SWITCHING REGULATOR, 63kHz SWITCHING FREQ-MAX, PDIP8, PLASTIC, DIP-8

与TC255P相关文章

采用MCU+MPU双处理器架构实现的创新应用设计探索
2024-08-23

11
解读L9904TR手册资料：产品概述、主要功能、电气参数
2024-08-20

21
芯片底部填充工艺：提升电子设备可靠性的关键步骤
2024-08-14

83
REF03GPZ资料解读：主要特征、技术参数、应用场景
2024-08-05

143

产品中心

服务支持

精选活动

关于我们

帮助中心

TC255P

TC255P 技术参数

TC255P 数据手册

与TC255P相关器件

与TC255P相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

TC255P

TC255P 技术参数

TC255P 数据手册

与TC255P相关器件

与TC255P相关文章

您还可以找

您在本页遇到什么问题？