TC254P

更新时间： 2024-01-24 14:29:48

品牌	Logo	应用领域
德州仪器 - TI		模拟IC 传感器图像传感器信号电路光电二极管
页数	文件大小	规格书
16页	247K
描述
336- 】 244-pixel ccd image sensor

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技术参数
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TC254P 技术参数

是否无铅：	含铅	是否Rohs认证：	不符合
生命周期：	Obsolete	零件包装代码：	DIP
包装说明：	2.54 MM PITCH, WINDOWED, PLASTIC, DIP-8	针数：	8
Reach Compliance Code：	not_compliant	HTS代码：	8542.39.00.01
Factory Lead Time：	1 week	风险等级：	5.84
Is Samacsys：	N	模拟集成电路 - 其他类型：	ANALOG CIRCUIT
JESD-30 代码：	R-PDIP-T8	长度：	10 mm
功能数量：	1	端子数量：	8
最高工作温度：	45 °C	最低工作温度：	-10 °C
封装主体材料：	PLASTIC/EPOXY	封装代码：	WDIP
封装形状：	RECTANGULAR	封装形式：	IN-LINE, WINDOW
峰值回流温度（摄氏度）：	NOT SPECIFIED	认证状态：	Not Qualified
座面最大高度：	4.74 mm	最大供电电压 (Vsup)：	13 V
最小供电电压 (Vsup)：	11 V	标称供电电压 (Vsup)：	12 V
表面贴装：	NO	技术：	MOS
温度等级：	COMMERCIAL	端子形式：	THROUGH-HOLE
端子节距：	2.54 mm	端子位置：	DUAL
处于峰值回流温度下的最长时间：	NOT SPECIFIED	宽度：	10.16 mm
Base Number Matches：	1

TC254P 数据手册

TC254P

336- × 244-PIXEL CCD IMAGE SENSOR

SOCS060B – JUNE 1997 – REVISED JULY 1998

DUAL-IN-LINE PACKAGE

(TOP VIEW)

• Medium-Resolution, Solid-State Image

Sensor for Low-Cost Color TV Applications

• 324(H) x 243(V) Active Elements in Image

IAG2

ADB

ABG

IAG1

Sensing Area

• 10-µm Square Pixels

• Small Size

• Low Cost

• Fast Clear Capability

SUB

OUT

SAG

SRG

• Electronic Shutter Function From

1/60–1/50000 s

• Low Dark Current

• Electron-Hole Recombination Antiblooming

• Dynamic Range . . . 66 dB Typical

• High Sensitivity

• High Blue Response

• 8-Pin Dual-In-Line Plastic Package

• 4-mm Image-Area Diagonal

• Solid-State Reliability With No Image

Burn-In, Residual Imaging, Image

Distortion, Image Lag, or Microphonics

description

The TC254P is a frame-transfer charge-coupled device (CCD) designed for use in color NTSC TV and special-

purpose applications requiring low cost and small size.

The image-sensing area of the TC254P is configured in 243 lines with 336 elements in each line. Twelve

elements are provided in each line for dark reference. The blooming-protection feature of the sensor is based

on recombining excess charge with charge of opposite polarity in the substrate. This antiblooming is activated

by supplying clocking pulses to the antiblooming gate, which is an integral part of each image-sensing element.

The sensor can be operated in a non-interlace mode as a 324(H) by 243(V) square color pixel mode by

alternately averaging two red pixels for red pixels and two blue pixels for blue pixels. Because the human eye

is most sensitive to the green light wavelength, the 324×243 resolution is preserved due to the orientation of

the green pixels in the Bayer mosaic color filter pattern.

The device can also be operated in a 162(H) by 121(V) square color pixel mode by utilizing a separate red, two

averaged greens, and a blue pixel for each color pixel. In this mode, true interlaced video is possible, effectively

increasing the vertical resolution, by performing a one pixel shift during the off-chip video processing.

One important aspect of this image sensor is its high-speed image-transfer capability. This capability allows for

an electronic shutter function comparable to interline-transfer and frame-interline-transfer sensors without the

loss of sensitivity and resolution inherent in those technologies.

This MOS device contains limited built-in gate protection. During storage or handling, the device leads should be shorted together

or the device should be placed in conductive foam. In a circuit, unused inputs should always be connected to SUB. Under no

circumstances should pin voltages exceed absolute maximum ratings. Avoid shorting OUTn to ADB during operation to prevent

damage to the amplifier. The device can also be damaged if the output terminals are reverse-biased and an excessive current is

allowed to flow. Specific guidelines for handling devices of this type are contained in the publication Guidelines for Handling

Electrostatic-Discharge-Sensitive (ESDS) Devices and Assemblies available from Texas Instruments.

PRODUCTION DATA information is current as of publication date.

Products conform to specifications per the terms of Texas Instruments

standard warranty. Production processing does not necessarily include

testing of all parameters.

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

12 3 4 5 6 7...16

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与TC254P相关器件

型号	品牌	获取价格	描述	数据表
TC255	TI	获取价格	336- 】 244-pixel ccd image sensor
TC2550	CDE	获取价格	Axial Leaded Aluminum Electrolytic Capacitors
TC255P	TI	获取价格	336- 】 244-pixel ccd image sensor
TC2571	TRANSCOM	获取价格	1 W Low-Cost Packaged PHEMT GaAs Power FETs
TC2574	TELCOM	获取价格	0.5A Step-Down Switching Regulator
TC2574-12.0VPA	MICROCHIP	获取价格	1.8 A SWITCHING REGULATOR, 63 kHz SWITCHING FREQ-MAX, PDIP8, PLASTIC, DIP-8
TC2574-12.0VPA	TELCOM	获取价格	0.5A Step-Down Switching Regulator
TC2574-12.0VPA	ROCHESTER	获取价格	1.8A SWITCHING REGULATOR, 63kHz SWITCHING FREQ-MAX, PDIP8, PLASTIC, DIP-8
TC2574-3.3VPA	TELCOM	获取价格	0.5A Step-Down Switching Regulator
TC2574-3.3VPA	ROCHESTER	获取价格	1.8A SWITCHING REGULATOR, 63kHz SWITCHING FREQ-MAX, PDIP8, PLASTIC, DIP-8

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