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TC253SPD-30 PDF预览

TC253SPD-30

更新时间: 2024-02-08 20:21:11
品牌 Logo 应用领域
德州仪器 - TI 模拟IC传感器图像传感器信号电路
页数 文件大小 规格书
21页 285K
描述
680 x 500 PIXEL IMPACTRON CCD IMAGE SENSOR

TC253SPD-30 技术参数

生命周期:Obsolete零件包装代码:WDIP
包装说明:1.78 MM PITCH, WINDOWED, CERAMIC, DIP-12针数:12
Reach Compliance Code:unknownHTS代码:8542.39.00.01
风险等级:5.84Is Samacsys:N
其他特性:IT ALSO REQUIRES A 12V SUPPLY模拟集成电路 - 其他类型:ANALOG CIRCUIT
JESD-30 代码:R-CDIP-T12长度:12.2 mm
功能数量:1端子数量:12
最高工作温度:45 °C最低工作温度:-10 °C
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装代码:WSDIP
封装形状:RECTANGULAR封装形式:IN-LINE, WINDOW, SHRINK PITCH
认证状态:Not Qualified座面最大高度:5.778 mm
最大供电电压 (Vsup):5.8 V最小供电电压 (Vsup):3.8 V
标称供电电压 (Vsup):4.8 V表面贴装:NO
温度等级:COMMERCIAL端子形式:THROUGH-HOLE
端子节距:1.778 mm端子位置:DUAL
宽度:11.43 mmBase Number Matches:1

TC253SPD-30 数据手册

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ꢀ ꢁꢂꢃ ꢄꢅ ꢆ ꢇꢈ ꢄꢉ  
ꢁꢁꢇ ꢌꢐ ꢑꢕ ꢎ ꢅ ꢎꢔ ꢅ ꢓ ꢒ  
×
 
JULY 2003 − SOCS085  
DUAL-IN-LINE PACKAGE  
(TOP VIEW)  
D
D
Very Low Noise, High Sensitivity  
Electronically Variable  
High Resolution, 1/3-in Format, Solid State  
Charge-Coupled Device (CCD) Frame  
Transfer Image Sensor for Black and White,  
NTSC, and Computer Applications  
ODB 1  
IAG2 2  
SAG2 3  
SRG1 4  
SRG2 5  
CMG 6  
IAG1  
12  
11  
SAG1  
D
D
D
340,000 Pixels per Field  
Frame Memory  
10 SUB  
656 (H) × 496 (V) Active Pixels in Image  
Sensing Area Compatible With Electronic  
Centering  
9
ADB  
NC  
D
Multimode Readout Capability  
− Progressive Scan  
− Interlace Scan  
8
7
V
OUT  
− Line Summing  
D
D
Fast Single-Pulse Clear Capability  
Continuous Electronic Exposure Control  
from 1/30 s to 1/5,000 s  
D
7.4- µm Square Pixels  
Advanced Lateral Overflow Drain Low Dark  
Current  
D
D
D
High Photoresponse Uniformity Over a  
Wide Spectral Range  
Solid-State Reliability With No Image  
Burn-In, Residual Imaging, Image  
Distortion, Image Lag, or Microphonics  
description  
The TC253SPD-30 is a frame-transfer, CCD image sensor designed for use in black and white, NTSC TV,  
computer, and special-purpose applications requiring high sensitivity, low noise, and small size.  
The TC253SPD-30 is a new device of the IMPACTRONfamily of very-low noise, high sensitivity image  
sensors that multiply charge directly in the charge domain before conversion to voltage. The charge carrier  
multiplication (CCM) is achieved by using a low-noise, single-carrier, impact ionization process that occurs  
during repeated carrier transfers through high-field regions. Applying multiplication pulses to specially designed  
gates activates the CCM. The amount of multiplication is adjustable according to the amplitude of multiplication  
pulses. The device function resembles the function of image intensifiers implemented in solid state.  
This device contains circuits to protect its inputs and outputs against damage due to high static voltages or electrostatic fields. These  
circuits have been qualified to protect this device against electrostatic discharges (ESD) of up to 2 kV according to MIL-STD-883C,  
Method 3015; however, it is advised that precautions be taken to avoid application of any voltage higher than maximum-rated  
voltages to these high-impedance circuits. During storage or handling, the device leads should be shorted together or the device  
should be placed in conductive foam. In a circuit, unused inputs should always be connected to an appropriate logic-voltage level,  
preferably either V  
or ground. Specific guidelines for handling devices of this type are contained in the publication Guidelines for  
CC  
Handling Electrostatic-Discharge-Sensitive (ESDS) Devices and Assemblies available from Texas Instruments.  
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
IMPACTRON is a trademark of Texas Instruments.  
ꢀꢢ  
Copyright 2003, Texas Instruments Incorporated  
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1
POST OFFICE BOX 655303 DALLAS, TEXAS 75265  

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