Datasheet > TC2201P0710

TC2201P0710

更新时间： 2024-11-13 15:53:55

品牌	Logo	应用领域
全讯科技 - TRANSCOM		/
页数	文件大小	规格书
4页	155K
描述
RF Small Signal Field-Effect Transistor

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TC2201P0710 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.71
Base Number Matches：	1

TC2201P0710 数据手册

TC2201

REV4_20070504

Plastic Packaged Low Noise PHEMT GaAs FETs

PHOTO ENLARGEMENT

FEATURES

• 1.5 dB Typical Noise Figure at 12 GHz

• High Associated Gain: Ga = 7 dB Typical at 12 GHz

• 21.5 dBm Typical Power at 12 GHz

• 8 dB Typical Linear Power Gain at 12 GHz

• Lg = 0.25 µm, Wg = 300 µm

• Tight Vp ranges control

• High RF input power handling capability

• 100 % DC Tested

• Low Cost Plastic Micro-X Package

DESCRIPTION

The TC2201 is a high performance field effect transistor housed in a plastic package with TC1201

PHEMT Chip. Its low noise figure makes this device suitable for use in low noise amplifiers. All devices

are 100 % DC tested to assure consistent quality.

ELECTRICAL SPECIFICATIONS (T_A=25 °C)

Symbol

CONDITIONS

Noise Figure at V_DS= 4 V, I_DS= 25 mA, f = 12GHz

Associated Gain at V_DS= 4 V, I_DS= 25 mA, f = 12GHz

Output Power at 1dB Gain Compression Point, f = 12GHz V_DS= 6 V, I_DS= 40 mA

Linear Power Gain, f = 12GHz V_DS= 6 V, I_DS= 40 mA

Saturated Drain-Source Current at V_DS= 2 V, V_GS= 0 V

Transconductance at V_DS= 2 V, V_GS= 0 V

MIN

TYP

1.5

MAX

UNIT

G_a

20.5

P_1dB

G_L

21.5

dBm

I_DSS

g_m

100

-1.0*

V_P

Pinch-off Voltage at V_DS= 2 V, I_D= 0.6mA

Volts

BV_DGODrain-Gate Breakdown Voltage at I_DGO= 0.15mA

R_thThermal Resistance

150

C/W

ABSOLUTE MAXIMUM RATINGS (T_A=25 °C)

* For the tight control of the pinch-off voltage range, we divide

TC2201 into 3 model numbers to fit customer design

requirement

(1) TC2201P0710 : Vp = -0.7V to -1.0V

(2) TC2201P0811 : Vp = -0.8V to -1.1V

(3) TC2201P0912 : Vp = -0.9V to -1.2V

If required, customer can specify the requirement in

Symbol

V_DS

V_GS

I_DS

Parameter

Drain-Source Voltage

Gate-Source Voltage

Drain Current

Rating

7.0 V

-3.0 V

I_DSS

I_GS

Gate Current

300 µA

P_in

RF Input Power, CW

Continuous Dissipation

Channel Temperature

Storage Temperature

21 dBm

purchasing document. For special Vp requirement, please

contact factory for details.

P_T

400 mW

175 °C

T_CH

T_STG

- 65 °C to +175 °C

TRANSCOM, INC., 90 Dasoong 7^thRoad, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C.

Web-Site: www.transcominc.com.tw

Phone: 886-6-5050086

Fax: 886-6-5051602

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