TC2201

更新时间： 2024-09-25 08:27:23

品牌	Logo	应用领域
全讯科技 - TRANSCOM		晶体小信号场效应晶体管射频小信号场效应晶体管
页数	文件大小	规格书
4页	159K
描述
Plastic Packaged Low Noise PHEMT GaAs FETs

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

TC2201 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.71
Is Samacsys：	N	Base Number Matches：	1

TC2201 数据手册

TC2201

REV4_20070504

Plastic Packaged Low Noise PHEMT GaAs FETs

PHOTO ENLARGEMENT

FEATURES

• 1.5 dB Typical Noise Figure at 12 GHz

• High Associated Gain: Ga = 7 dB Typical at 12 GHz

• 21.5 dBm Typical Power at 12 GHz

• 8 dB Typical Linear Power Gain at 12 GHz

• Lg = 0.25 µm, Wg = 300 µm

• Tight Vp ranges control

• High RF input power handling capability

• 100 % DC Tested

• Low Cost Plastic Micro-X Package

DESCRIPTION

The TC2201 is a high performance field effect transistor housed in a plastic package with TC1201

PHEMT Chip. Its low noise figure makes this device suitable for use in low noise amplifiers. All devices

are 100 % DC tested to assure consistent quality.

ELECTRICAL SPECIFICATIONS (T_A=25 °C)

Symbol

CONDITIONS

Noise Figure at V_DS= 4 V, I_DS= 25 mA, f = 12GHz

Associated Gain at V_DS= 4 V, I_DS= 25 mA, f = 12GHz

Output Power at 1dB Gain Compression Point, f = 12GHz V_DS= 6 V, I_DS= 40 mA

Linear Power Gain, f = 12GHz V_DS= 6 V, I_DS= 40 mA

Saturated Drain-Source Current at V_DS= 2 V, V_GS= 0 V

Transconductance at V_DS= 2 V, V_GS= 0 V

MIN

TYP

1.5

MAX

UNIT

G_a

20.5

P_1dB

G_L

21.5

dBm

I_DSS

g_m

100

-1.0*

V_P

Pinch-off Voltage at V_DS= 2 V, I_D= 0.6mA

Volts

BV_DGODrain-Gate Breakdown Voltage at I_DGO= 0.15mA

R_thThermal Resistance

150

C/W

ABSOLUTE MAXIMUM RATINGS (T_A=25 °C)

* For the tight control of the pinch-off voltage range, we divide

TC2201 into 3 model numbers to fit customer design

requirement

(1) TC2201P0710 : Vp = -0.7V to -1.0V

(2) TC2201P0811 : Vp = -0.8V to -1.1V

(3) TC2201P0912 : Vp = -0.9V to -1.2V

If required, customer can specify the requirement in

Symbol

V_DS

V_GS

I_DS

Parameter

Drain-Source Voltage

Gate-Source Voltage

Drain Current

Rating

7.0 V

-3.0 V

I_DSS

I_GS

Gate Current

300 µA

P_in

RF Input Power, CW

Continuous Dissipation

Channel Temperature

Storage Temperature

21 dBm

purchasing document. For special Vp requirement, please

contact factory for details.

P_T

400 mW

175 °C

T_CH

T_STG

- 65 °C to +175 °C

TRANSCOM, INC., 90 Dasoong 7^thRoad, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C.

Web-Site: www.transcominc.com.tw

Phone: 886-6-5050086

Fax: 886-6-5051602

P 1 / 4

12 3 4

中文翻译

下载PDF

与TC2201相关器件

型号	品牌	获取价格	描述	数据表
TC2201P0710	TRANSCOM	获取价格	RF Small Signal Field-Effect Transistor
TC2201P0912	TRANSCOM	获取价格	RF Small Signal Field-Effect Transistor
TC220321A5J0G	AMPHENOL	获取价格	Barrier Strip Terminal Block
TC22033200J0G	AMPHENOL	获取价格	Barrier Strip Terminal Block
TC22033300J0G	AMPHENOL	获取价格	Barrier Strip Terminal Block
TC22033C5J0G	AMPHENOL	获取价格	Barrier Strip Terminal Block
TC220343A5J0G	AMPHENOL	获取价格	Barrier Strip Terminal Block
TC22035100J0G	AMPHENOL	获取价格	Barrier Strip Terminal Block
TC220351A5J0G	AMPHENOL	获取价格	Barrier Strip Terminal Block
TC22036200J0G	AMPHENOL	获取价格	Barrier Strip Terminal Block,

与TC2201相关文章

塔塔电子与力积电达成技术转让协议，携手建设印度首座晶圆厂
2024-09-29

6
英特尔震撼发布：128核心256线程的至强6性能核处理器
2024-09-29

8
SK海力士量产12层HBM3E，容量高达36GB
2024-09-27

11
意法半导体传感器驱动Sphere，开启沉浸式电影新时代
2024-09-27

16

产品中心

服务支持

精选活动

关于我们

帮助中心

TC2201

TC2201 技术参数

TC2201 数据手册

与TC2201相关器件

与TC2201相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

TC2201

TC2201 技术参数

TC2201 数据手册

与TC2201相关器件

与TC2201相关文章

您还可以找

您在本页遇到什么问题？