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TC211 PDF预览

TC211

更新时间: 2024-11-24 22:20:07
品牌 Logo 应用领域
德州仪器 - TI 模拟IC传感器图像传感器信号电路
页数 文件大小 规格书
13页 176K
描述
192- 】 165-pixel ccd image sensor

TC211 技术参数

是否无铅: 含铅生命周期:Obsolete
零件包装代码:DIP包装说明:0.300 INCH, 2.54 MM PITCH, WINDOWED, CERAMIC, DIP-6
针数:6Reach Compliance Code:unknown
HTS代码:8542.39.00.01风险等级:5.56
Is Samacsys:N模拟集成电路 - 其他类型:ANALOG CIRCUIT
JESD-30 代码:R-CDIP-T6长度:7.53 mm
功能数量:1端子数量:6
最高工作温度:45 °C最低工作温度:-10 °C
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装代码:WDIP
封装形状:RECTANGULAR封装形式:IN-LINE, WINDOW
认证状态:Not Qualified最大供电电流 (Isup):10 mA
最大供电电压 (Vsup):13 V最小供电电压 (Vsup):11 V
标称供电电压 (Vsup):12 V表面贴装:NO
温度等级:COMMERCIAL端子形式:THROUGH-HOLE
端子节距:2.54 mm端子位置:DUAL
宽度:7.62 mmBase Number Matches:1

TC211 数据手册

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TC211  
192- × 165-PIXEL CCD IMAGE SENSOR  
SOCS008B – JANUARY 1990  
DUAL-IN-LINE PACKAGE  
(TOP VIEW)  
Full-Frame Operation  
Antiblooming Capability  
Single-Phase Clocking for Horizontal and  
Vertical Transfers  
ABG  
1
2
3
6
5
4
IAG  
Fast Clear Capability  
V
SS  
SRG  
OUT  
Dynamic Range . . . 60 dB Typical  
High Blue Response  
ADB  
High Photoresponse Uniformity  
Solid-State Reliability With No Image  
Burn-In, Residual Imaging, Image  
Distortion, Image Lag, or Microphonics  
6-Pin Dual-In-Line Ceramic Package  
Square Image Area:  
– 2640 µm by 2640 µm  
– 192 Pixels (H) by 165 Pixels (V)  
– Each Pixel 13.75 µm (H) by 16 µm (V)  
description  
The TC211 is a full-frame charge-coupled device (CCD) image sensor designed specifically for industrial  
applications requiring ruggedness and small size. The image-sensing area is configured into 165 horizontal  
lines each containing 192 pixels. Twelve additional pixels are provided at the end of each line to establish a dark  
reference and line clamp. The antiblooming feature is activated by supplying clock pulses to the antiblooming  
gate, an integral part of each image-sensing element. The charge is converted to signal voltage at 4 µV per  
electron by a high-performance structure with built-in automatic reset and a voltage-reference generator. The  
signal is further buffered by a low-noise two-stage source-follower amplifier to provide high output-drive  
capability.  
The TC211 is supplied in a 6-pin dual-in-line ceramic package approximately 7,5 mm (0.3 in.) square. The glass  
window can be cleaned using any standard method for cleaning optical assemblies or by wiping the surface with  
a cotton swab soaked in alcohol.  
The TC211 is characterized for operation from 10°C to 45°C.  
This MOS device contains limited built-in gate protection. During storage or handling, the device leads should be shorted together  
or the device should be placed in conductive foam. In a circuit, unused inputs should always be connected to V . Under no  
SS  
circumstances should pin voltages exceed absolute maximum ratings. Avoid shorting OUT to V  
during operation to prevent  
SS  
damage to the amplifier. The device can also be damaged if the output terminals are reverse-biased and an excessive current is  
allowed to flow. Specific guidelines for handling devices of this type are contained in the publication Guidelines for Handling  
Electrostatic-Discharge-Sensitive (ESDS) Devices and Assemblies available from Texas Instruments.  
Copyright 1990, Texas Instruments Incorporated  
PRODUCTION DATA information is current as of publication date.  
Products conform to specifications per the terms of Texas Instruments  
standard warranty. Production processing does not necessarily include  
testing of all parameters.  
2-1  
POST OFFICE BOX 655303 DALLAS, TEXAS 75265  

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