Datasheet > TC1SS244M_08

TC1SS244M_08

更新时间： 2024-10-28 08:27:27

品牌	Logo	应用领域
TAK_CHEONG		二极管开关高压
页数	文件大小	规格书
4页	126K
描述
300 mW DO-34 Hermetically Sealed Glass - High Voltage Switching Diodes

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TC1SS244M_08 数据手册

TAK CHEONG ^®

SEMICONDUCTOR

300 mW DO-34 Hermetically

Sealed Glass - High Voltage

Switching Diodes

AXIAL LEAD

DO34

Absolute Maximum Ratings T_A= 25°C unless otherwise noted

Symbol

Parameter

Value

Units

V_RRM

T_STG

T_J

Maximum Repetitive Reverse Voltage

Storage Temperature Range

250

-65 to +150

+150

°C

DEVICE MARKING DIAGRAM

Operating Junction Temperature

Average Rectified Forward Current

I_{F (AV)}

I_FSM

200

Non-repetitive Peak Forward Current

Pulse Width = 1.0 Second

1.0

4.0

: Logo

Pulse Width = 1.0 µsecond

Device Code : TC1SS244M

These ratings are limiting values above which the serviceability of the diode may be impaired.

Thermal Characteristics

Symbol

Parameter

Value

Units

P_D

Power Dissipation

300

Specification Features:

DO-34 Package (JEDEC)

Through-Hole Device Type Mounting

Hermetically Sealed Glass

Cathode

Anode

Compression Bonded Construction

All External Surfaces Are Corrosion Resistant And Lads Are Readily Solderable

RoHS Compliant

ELECTRICAL SYMBOL

Solder Hot Dip Tin (Sn) Terminal Finish

Cathode Indicated By Polarity Band

Electrical Characteristics

T_A= 25°C unless otherwise noted

Limits

Symbol

Parameter

Test Condition

I_R=100µA

Unit

Min

250

---

Max

---

B_V

I_R

Breakdown Voltage

Reverse Leakage Current

Forward Voltage

Volts

µA

V_R=220V

V_F

T_RR

I_F=200mA

I_F=I_R=30mA

R_L=100Ω

---

1.5

Volts

Reverse Recovery Time

---

I_RR=3mA

Capacitance

V_R=0V, f=1M_HZ

5.0

Number: DB-051

June 2008 / C

Page 1

12 3 4

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