5秒后页面跳转
TC1N914BM PDF预览

TC1N914BM

更新时间: 2024-10-27 06:15:43
品牌 Logo 应用领域
TAK_CHEONG 整流二极管开关
页数 文件大小 规格书
4页 126K
描述
300 mW DO-34 Hermetically Sealed Glass Fast Switching Diodes

TC1N914BM 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:DO-34
包装说明:O-LALF-W2针数:2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.70风险等级:5.23
Is Samacsys:N外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.72 V
JEDEC-95代码:DO-34JESD-30 代码:O-LALF-W2
JESD-609代码:e3最大非重复峰值正向电流:2 A
元件数量:1端子数量:2
最高工作温度:150 °C最大输出电流:0.15 A
封装主体材料:GLASS封装形状:ROUND
封装形式:LONG FORM峰值回流温度(摄氏度):NOT SPECIFIED
最大功率耗散:0.3 W认证状态:Not Qualified
最大反向恢复时间:0.004 µs子类别:Rectifier Diodes
表面贴装:NO端子面层:Tin (Sn)
端子形式:WIRE端子位置:AXIAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

TC1N914BM 数据手册

 浏览型号TC1N914BM的Datasheet PDF文件第2页浏览型号TC1N914BM的Datasheet PDF文件第3页浏览型号TC1N914BM的Datasheet PDF文件第4页 
TAK CHEONG ®  
SEMICONDUCTOR  
300 mW DO-34 Hermetically  
Sealed Glass Fast Switching  
Diodes  
AXIAL LEAD  
DO34  
DEVICE MARKING DIAGRAM  
Absolute Maximum Ratings TA = 25°C unless otherwise noted  
(TC1N4148M)  
Symbol  
Parameter  
Value  
Units  
PD  
TSTG  
TJ  
Power Dissipation  
300  
-65 to +150  
+175  
mW  
°C  
Storage Temperature Range  
Operating Junction Temperature  
Working Inverse Voltage  
L
: Logo  
°C  
WIV  
IO  
75  
V
DEVICE MARKING DIAGRAM  
(TC1N4448M / TC1N914BM)  
Average Rectified Current  
150  
mA  
mA  
IFM  
Non-repetitive Peak Forward Current  
450  
Peak Forward Surge Current  
(Pulse Width = 1.0 µsecond)  
IFSURGE  
2
A
These ratings are limiting values above which the serviceability of the diode may be impaired.  
L
: Logo  
Device Code : TC1NxxxxM  
Specification Features:  
ƒ
ƒ
ƒ
ƒ
ƒ
ƒ
ƒ
ƒ
ƒ
Fast Switching Device (TRR <4.0 nS)  
DO-34 Package (JEDEC DO-204)  
Through-Hole Device Type Mounting  
Hermetically Sealed Glass  
Anode  
Cathode  
Compression Bonded Construction  
All External Surfaces Are Corrosion Resistant And Lads Are Readily Solderable  
RoHS Compliant  
ELECTRICAL SYMBOL  
Solder Hot Dip Tin (Sn) Terminal Finish  
Cathode Indicated By Polarity Band  
Electrical Characteristics  
TA = 25°C unless otherwise noted  
Limits  
Symbol  
Parameter  
Test Condition  
IR=100µA  
Unit  
Min  
Max  
BV  
Breakdown Voltage  
Reverse Leakage Current  
Forward Voltage  
100  
75  
Volts  
IR=5µA  
IR  
VR=20V  
25  
5
nA  
µA  
VR=75V  
VF  
TC1N4448M, TC1N914BM  
TC1N4148M, TC1N4148M  
TC1N4448M, TC1N914BM  
IF=5mA  
0.62  
0.72  
1.0  
1.0  
IF=10mA  
Volts  
IF=100mA  
IF=10mA, VR=6V  
RL=100Ω  
IRR=1mA  
TRR  
Reverse Recovery Time  
Capacitance  
4
4
nS  
pF  
C
VR=0V, f=1MHZ  
Number: DB-050  
June 2008 / E  
Page 1  

与TC1N914BM相关器件

型号 品牌 获取价格 描述 数据表
TC1N914BM.TB TAK_CHEONG

获取价格

Rectifier Diode, 1 Element, 0.15A, Silicon, DO-34, HERMETIC SEALED, GLASS, DO-204, 2 PIN
TC1N914BMT26B TAK_CHEONG

获取价格

Rectifier Diode,
TC1N914BMTB TAK_CHEONG

获取价格

暂无描述
TC1N914BRL TAK_CHEONG

获取价格

暂无描述
TC1N914BTA TAK_CHEONG

获取价格

暂无描述
TC1N914BTR TAK_CHEONG

获取价格

Rectifier Diode,
TC1N914BW TAK_CHEONG

获取价格

Rectifier Diode, 1 Element, 0.15A, 75V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-2
TC1N914BWS TAK_CHEONG

获取价格

Rectifier Diode, 1 Element, 0.15A, 75V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, SC-90, 2
TC1N914BWT TAK_CHEONG

获取价格

200mW SOD-523 SURFACE MOUNT Fast Switching Diode
TC1N914BWT TC

获取价格

SOD-523