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TC1N60P PDF预览

TC1N60P

更新时间: 2024-11-15 06:15:43
品牌 Logo 应用领域
TAK_CHEONG 小信号肖特基二极管
页数 文件大小 规格书
2页 76K
描述
500 mW DO-35 Hermetically Sealed Glass Small Signal Schottky Diodes

TC1N60P 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:DO-35
包装说明:ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2针数:2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.70风险等级:5.58
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JEDEC-95代码:DO-35JESD-30 代码:O-LALF-W2
JESD-609代码:e3元件数量:1
端子数量:2最高工作温度:125 °C
最低工作温度:-65 °C最大输出电流:0.05 A
封装主体材料:GLASS封装形状:ROUND
封装形式:LONG FORM峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大重复峰值反向电压:45 V
最大反向恢复时间:0.001 µs表面贴装:NO
技术:SCHOTTKY端子面层:Tin (Sn)
端子形式:WIRE端子位置:AXIAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

TC1N60P 数据手册

 浏览型号TC1N60P的Datasheet PDF文件第2页 
®
TAK CHEONG  
PRELIMINARY DATASHEET  
500 mW DO-35 Hermetically  
Sealed Glass Small Signal  
Schottky Diodes  
AXIAL LEAD  
DO35  
Absolute Maximum Ratings TA = 25°C unless otherwise noted  
Value  
Symbol  
Parameter  
Units  
DEVICE MARKING DIAGRAM  
1N60  
40  
1N60P  
45  
VRRM  
IF  
Peak Reverse Voltage  
V
L
1N  
xxx  
Forward Continuous Current  
30  
50  
mA  
mA  
IFSM  
Peak Forward Surge Current (t =1S)  
Storage and Junction Temperature Range  
150  
500  
L
: Logo  
TC1Nxxxx : Device Code  
TSTG /TJ  
-65 to +125  
These ratings are limiting values above which the serviceability of the diode may be impaired.  
Specification Features:  
ƒ
ƒ
ƒ
ƒ
ƒ
ƒ
ƒ
ƒ
DO-35 Package (JEDEC)  
Through-Hole Device Type Mounting  
Hermetically Sealed Glass  
Anode  
Cathode  
Compression Bonded Construction  
All External Surfaces Are Corrosion Resistant And Leads Are Readily Solderable  
RoHS Compliant  
ELECTRICAL SYMBOL  
Solder Hot Dip Tin (Sn) Terminal Finish.  
Cathode Indicated By Polarity Band  
Electrical Characteristics  
TA = 25°C unless otherwise noted  
Limits  
Symbol  
Parameter  
Test Condition  
Type  
1N60  
Unit  
Min  
Typ  
0.32  
0.24  
0.65  
0.65  
0.1  
Max  
0.5  
0.5  
1.0  
1.0  
0.5  
1.0  
IF=1mA  
Volts  
1N60P  
1N60  
VF  
Forward Voltage  
IF=30mA  
Volts  
Volts  
IF=200mA  
1N60P  
1N60  
IR  
CJ  
Reverse Leakage Current  
Junction Capacitance  
VR=15V  
uA  
pF  
nS  
1N60P  
1N60  
0.5  
VR=1V, f=1MHz  
VR=10V, f=1MHz  
2.0  
1N60P  
1N60  
6.0  
IF=IR=1mA, Irr=1mA,  
Rc=100Ω  
TRR  
Reverse Recovery Time  
1
1N60P  
Number: DB-046  
December 2006 / A  
Page 1  

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