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TC1N5251A PDF预览

TC1N5251A

更新时间: 2024-11-15 10:09:23
品牌 Logo 应用领域
TAK_CHEONG 测试二极管
页数 文件大小 规格书
7页 182K
描述
Zener Diode, 22V V(Z), 10%, 0.5W, Silicon, Unidirectional, DO-35, HERMETIC SEALED, GLASS PACKAGE-2

TC1N5251A 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:DO-35
包装说明:O-LALF-W2针数:2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.17
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:ZENER DIODE
最大动态阻抗:29 ΩJEDEC-95代码:DO-35
JESD-30 代码:O-LALF-W2JESD-609代码:e3
元件数量:1端子数量:2
最高工作温度:200 °C封装主体材料:GLASS
封装形状:ROUND封装形式:LONG FORM
峰值回流温度(摄氏度):NOT SPECIFIED极性:UNIDIRECTIONAL
最大功率耗散:0.5 W认证状态:Not Qualified
标称参考电压:22 V子类别:Voltage Reference Diodes
表面贴装:NO技术:ZENER
端子面层:TIN端子形式:WIRE
端子位置:AXIAL处于峰值回流温度下的最长时间:NOT SPECIFIED
最大电压容差:10%工作测试电流:5.6 mA

TC1N5251A 数据手册

 浏览型号TC1N5251A的Datasheet PDF文件第2页浏览型号TC1N5251A的Datasheet PDF文件第3页浏览型号TC1N5251A的Datasheet PDF文件第4页浏览型号TC1N5251A的Datasheet PDF文件第5页浏览型号TC1N5251A的Datasheet PDF文件第6页浏览型号TC1N5251A的Datasheet PDF文件第7页 
®
TAK CHEONG  
SEMICONDUCTOR  
500 mW DO-35 Hermetically  
Sealed Glass Zener Voltage  
Regulators  
AXIAL LEAD  
DO35  
Absolute Maximum Ratings TA = 25°C unless otherwise noted  
DEVICE MARKING DIAGRAM  
Parameter  
Value  
Units  
L
Power Dissipation  
500  
-65 to +200  
+200  
mW  
°C  
52  
xx  
T
Storage Temperature Range  
Operating Junction Temperature  
°C  
L
: Logo  
Lead Temperature (1/16” from case for 10 seconds)  
+230  
°C  
Device Code : TC1N52xxT  
Tolerance (T) : A = 10%  
: B = 5%  
These ratings are limiting values above which the serviceability of the diode may be impaired.  
: C = 2%  
: D = 1%  
Specification Features:  
Zener Voltage Range 2.4 to 56 Volts  
DO-35 Package (JEDEC)  
Through-Hole Device Type Mounting  
Hermetically Sealed Glass  
Cathode  
Anode  
Compression Bonded Construction  
All external surfaces are corrosion resistant and leads are readily solderable  
Cathode indicated by polarity band  
ELECTRICAL SYMBOL  
Electrical Characteristics  
TA = 25°C unless otherwise noted  
ZZT @ IZT  
()  
Max  
ZZK @ IZK = 0.25mA  
IR @ VR  
(µA)  
Max  
VZ @ IZT  
(Volts)  
Nominal  
IZT  
(mA)  
VR  
(Volts)  
Device Type  
()  
Max  
TC1N5221B  
TC1N5222B  
TC1N5223B  
TC1N5224B  
TC1N5225B  
TC1N5226B  
TC1N5227B  
TC1N5228B  
TC1N5229B  
TC1N5230B  
TC1N5231B  
TC1N5232B  
TC1N5233B  
TC1N5234B  
TC1N5235B  
TC1N5236B  
TC1N5237B  
TC1N5238B  
TC1N5239B  
TC1N5240B  
TC1N5241B  
TC1N5242B  
TC1N5243B  
TC1N5244B  
2.4  
2.5  
2.7  
2.8  
3
3.3  
3.6  
3.9  
4.3  
4.7  
5.1  
5.6  
6
6.2  
6.8  
7.5  
8.2  
8.7  
9.1  
10  
20  
20  
20  
20  
20  
20  
20  
20  
20  
20  
20  
20  
20  
20  
20  
20  
20  
20  
20  
20  
20  
20  
9.5  
9
30  
30  
30  
30  
29  
28  
24  
23  
22  
19  
17  
11  
7
1200  
1250  
1300  
1400  
1600  
1600  
1700  
1900  
2000  
1900  
1600  
1600  
1600  
1000  
750  
500  
500  
600  
600  
600  
600  
600  
600  
100  
100  
75  
75  
50  
25  
15  
10  
5
5
5
5
5
5
3
3
3
3
3
3
2
1
1
1
1
1
1
1
1
1
2
2
3
3.5  
4
5
6
6.5  
6.5  
7
7
5
6
8
8
10  
17  
22  
30  
13  
15  
8
11  
12  
13  
14  
8.4  
9.1  
9.9  
10  
1
0.5  
0.1  
600  
June 2004 / C  
Page 1  

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