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TC1N4448 PDF预览

TC1N4448

更新时间: 2024-09-25 17:14:59
品牌 Logo 应用领域
德昌 - TC /
页数 文件大小 规格书
3页 81K
描述
DO-35

TC1N4448 数据手册

 浏览型号TC1N4448的Datasheet PDF文件第2页浏览型号TC1N4448的Datasheet PDF文件第3页 
TAK CHEONG
®  
SEMICONDUCTOR  
500 mW DO-35 Hermetically  
Sealed Glass Fast Switching  
Diodes  
AXIAL LEAD  
DO35  
Absolute Maximum Ratings TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Value  
Units  
PD  
TSTG  
TJ  
Power Dissipation  
500  
-65 to +150  
+150  
mW  
°C  
DEVICE MARKING DIAGRAM  
Storage Temperature Range  
Operating Junction Temperature  
Working Inverse Voltage  
L
xx  
xx  
°C  
WIV  
IO  
75  
V
Average Rectified Current  
150  
mA  
mA  
L
: Logo  
TC1Nxxxx : Device Code  
IFM  
Non-repetitive Peak Forward Current  
450  
Peak Forward Surge Current  
(Pulse Width = 1.0 µsecond)  
IFSURGE  
2
A
These ratings are limiting values above which the serviceability of the diode may be impaired.  
Specification Features:  
§ Fast Switching Device (TRR <4.0 nS)  
§ DO-35 Package (JEDEC)  
§ Through-Hole Device Type Mounting  
§ Hermetically Sealed Glass  
Anode  
Cathode  
§ Compression Bonded Construction  
§ All External Surfaces Are Corrosion Resistant And Leads Are Readily Solderable  
§ RoHS Compliant  
ELECTRICAL SYMBOL  
§ Solder Hot Dip Tin (Sn) Terminal Finish  
§ Cathode Indicated By Polarity Band  
Electrical Characteristics  
TA = 25°C unless otherwise noted  
Limits  
Symbol  
Parameter  
Test Condition  
IR=100µA  
Unit  
Min  
100  
75  
Max  
BV  
Breakdown Voltage  
Reverse Leakage Current  
Forward Voltage  
Volts  
IR=5µA  
IR  
VR=20V  
VR=75V  
IF=5mA  
IF=10mA  
IF=100mA  
25  
5
nA  
µA  
VF  
TC1N4448, TC1N914B  
TC1N4148  
0.62  
0.72  
1.0  
1.0  
Volts  
TC1N4448, TC1N914B  
TRR  
Reverse Recovery Time  
Capacitance  
IF=10mA, VR=6V  
RL=100W  
4
4
nS  
pF  
IRR=1mA  
C
VR=0V, f=1MHZ  
Number: DB-036  
October 2016 / H  
Page 1  

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