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TC1N4148M PDF预览

TC1N4148M

更新时间: 2024-02-10 04:23:19
品牌 Logo 应用领域
TAK_CHEONG 整流二极管开关
页数 文件大小 规格书
4页 126K
描述
300 mW DO-34 Hermetically Sealed Glass Fast Switching Diodes

TC1N4148M 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Active包装说明:ROHS COMPLIANT, PLASTIC PACKAGE-2
针数:2Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.70
风险等级:5.68Is Samacsys:N
其他特性:FAST SWITCHES配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JESD-30 代码:R-PDSO-F2JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:2最高工作温度:150 °C
最大输出电流:0.15 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED最大功率耗散:0.2 W
认证状态:Not Qualified最大重复峰值反向电压:75 V
最大反向恢复时间:0.004 µs表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:FLAT
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

TC1N4148M 数据手册

 浏览型号TC1N4148M的Datasheet PDF文件第2页浏览型号TC1N4148M的Datasheet PDF文件第3页浏览型号TC1N4148M的Datasheet PDF文件第4页 
TAK CHEONG ®  
SEMICONDUCTOR  
300 mW DO-34 Hermetically  
Sealed Glass Fast Switching  
Diodes  
AXIAL LEAD  
DO34  
DEVICE MARKING DIAGRAM  
Absolute Maximum Ratings TA = 25°C unless otherwise noted  
(TC1N4148M)  
Symbol  
Parameter  
Value  
Units  
PD  
TSTG  
TJ  
Power Dissipation  
300  
-65 to +150  
+175  
mW  
°C  
Storage Temperature Range  
Operating Junction Temperature  
Working Inverse Voltage  
L
: Logo  
°C  
WIV  
IO  
75  
V
DEVICE MARKING DIAGRAM  
(TC1N4448M / TC1N914BM)  
Average Rectified Current  
150  
mA  
mA  
IFM  
Non-repetitive Peak Forward Current  
450  
Peak Forward Surge Current  
(Pulse Width = 1.0 µsecond)  
IFSURGE  
2
A
These ratings are limiting values above which the serviceability of the diode may be impaired.  
L
: Logo  
Device Code : TC1NxxxxM  
Specification Features:  
ƒ
ƒ
ƒ
ƒ
ƒ
ƒ
ƒ
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Fast Switching Device (TRR <4.0 nS)  
DO-34 Package (JEDEC DO-204)  
Through-Hole Device Type Mounting  
Hermetically Sealed Glass  
Anode  
Cathode  
Compression Bonded Construction  
All External Surfaces Are Corrosion Resistant And Lads Are Readily Solderable  
RoHS Compliant  
ELECTRICAL SYMBOL  
Solder Hot Dip Tin (Sn) Terminal Finish  
Cathode Indicated By Polarity Band  
Electrical Characteristics  
TA = 25°C unless otherwise noted  
Limits  
Symbol  
Parameter  
Test Condition  
IR=100µA  
Unit  
Min  
Max  
BV  
Breakdown Voltage  
Reverse Leakage Current  
Forward Voltage  
100  
75  
Volts  
IR=5µA  
IR  
VR=20V  
25  
5
nA  
µA  
VR=75V  
VF  
TC1N4448M, TC1N914BM  
TC1N4148M, TC1N4148M  
TC1N4448M, TC1N914BM  
IF=5mA  
0.62  
0.72  
1.0  
1.0  
IF=10mA  
Volts  
IF=100mA  
IF=10mA, VR=6V  
RL=100Ω  
IRR=1mA  
TRR  
Reverse Recovery Time  
Capacitance  
4
4
nS  
pF  
C
VR=0V, f=1MHZ  
Number: DB-050  
June 2008 / E  
Page 1  

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