TC1501
REV5_20070502
1W High Linearity and High Efficiency GaAs Power FETs
FEATURES
ꢀ1W Typical Power at 6 GHz
PHOTO ENLARGEMENT
ꢀLinear Power Gain: GL = 13 dB Typical at 6 GHz
ꢀHigh Linearity: IP3 = 40 dBm Typical at 6 GHz
ꢀHigh Power Added Efficiency: Nominal PAE of 43% at 6 GHz
ꢀVia Hole Source Ground
ꢀSuitable for High Reliability Application
ꢀBreakdown Voltage: BVDGO ≥ 15 V
ꢀLg = 0.35 µm, Wg = 2.4 mm
ꢀTight Vp ranges control
ꢀHigh RF input power handling capability
ꢀ100 % DC Tested
DESCRIPTION
The TC1501 is a GaAs Pseudomorphic High Electron Mobility Transistor (PHEMT) which has high linearity and
high Power Added Efficiency. The device is processed with a propriety via-hole process, which provides low
thermal resistance and low inductance. The short gate length enables the device to be used in circuits up to 20GHz.
All devices are 100% DC tested to assure consistent quality. Bond pads are gold plated for either
thermo-compression or thermo-sonic wire bonding. Backside gold plating is compatible with standard AuSn
die-attach. Typical application include commercial and military high performance power amplifiers.
ELECTRICAL SPECIFICATIONS (TA=25 °C)
MIN
29.5
12
TYP MAX UNIT
Symbol
Conditions
30
13
dBm
dB
P1dB Output Power at 1dB Gain Compression Point , f = 6 GHz VDS = 8 V, IDS = 240 mA
GL
Linear Power Gain, f = 6 GHz VDS = 8 V, IDS = 240 mA
Intercept Point of the 3rd-order Intermodulation, f = 6 GHz VDS = 8 V, IDS = 240 mA,*PSCL = 17 dBm
40
dBm
%
IP3
43
PAE Power Added Efficiency at 1dB Compression Power, f = 6 GHz
600
400
-1.7**
18
mA
IDSS Saturated Drain-Source Current at VDS = 2 V, VGS = 0 V
mS
gm
VP
Transconductance at VDS = 2 V, VGS = 0 V
Pinch-off Voltage at VDS = 2 V, ID = 4.8 mA
Volts
Volts
°C/W
15
BVDGO Drain-Gate Breakdown Voltage at IDGO =1.2 mA
12
Rth
Thermal Resistance
Note:
* PSCL: Output Power of Single Carrier Level.
* *For the tight control of the pinch-off voltage . TC1501’s are divided into 3 groups:
(1)TC1501P1519 : Vp = -1.5V to -1.9V (2) TC1501P1620 : Vp = -1.6V to -2.0V
(3)TC1501P1721 : Vp = -1.7V to -2.1V In addition, the customers may specify their requirements.
TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C.
Web-Site: www.transcominc.com.tw
Phone: 886-6-5050086
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Fax: 886-6-5051602