Datasheet > TBSS84EDW

TBSS84EDW

更新时间： 2024-04-09 18:59:35

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
4页	452K
描述
0.13A, 50V, 0.3W, P Channel, Dual MOSFETs

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数据手册

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TBSS84EDW 数据手册

P-Channel Enhancement Mode MOSFET

TBSS84EDW

Features



Low on-resistance

High-speed switching

Drive circuits can be simple

Parallel use is easy

ESD protected gate up to 1KV HBM

Halogen free

Qualified to AEC-Q101 standards for high reliability

Typical Applications



P-channel enhancement mode effect transistor

Switching application

Mechanical Data



Case: SOT-363

Molding Compound: UL Flammability Classification Rating 94V-0

Terminals: Matte tin-plated leads; solderability-per MIL-STD-202, Method 208

SOT-363

Ordering Information

Part Number

Package

Shipping Quantity

Marking Code

TBSS84EDW

SOT-363

3000 pcs / Tape & Reel

EK84

Maximum Ratings (@ T_A= 25°C unless otherwise specified)

Parameter Symbol

Value

Unit

Drain-to-Source Voltage

V_DSS

V_GSS

I_D

-50

Gate-to-Source Voltage

Continuous Drain Current

Pulsed Drain Current ^*4

±20

-130

-520

I_DM

Thermal Characteristics

Parameter

Symbol

Value

Unit

Power Dissipation

P_D

R_θJA

T_J

0.3

417

°C/W

°C

Thermal Resistance Junction-to-Air

Operating Junction Temperature Range

-55 ~ +150

Storage Temperature Range

MTM0675A: February 2022

T_STG

-55 ~ +150

°C

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