Datasheet > TBSS8402DW

TBSS8402DW

更新时间： 2024-11-19 17:01:39

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
8页	739K
描述
N:0.115A, 60V, 0.2W, Dual MOSFETs P:-0.13A, -50V, 0.2W, Dual MOSFETs

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中文翻译

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数据手册

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TBSS8402DW 数据手册

P＋N-Channel Enhancement Mode MOSFET

TBSS8402DW

Features



Low on-resistance

Low gate threshold voltage

Low input capacitance

Fast switching speed

Halogen free

Qualified to AEC-Q101 standards for high reliability

Mechanical Data



Case: SOT-363

Molding Compound: UL Flammability Classification Rating 94V-0

Terminals: Matte tin-plated leads; solderability-per MIL-STD-202,

Method 208

SOT-363

Ordering Information

Part Number

Package

Shipping Quantity

Marking Code

TBSS8402DW

SOT-363

3000 pcs / Tape & Reel

KNP

Maximum Ratings (@ T_A= 25°C unless otherwise specified)

Parameter

Symbol

Unit

Drain-to-Source Voltage

V_DSS

V_GSS

±20

115

-50

±20

Gate-to-Source Voltage

Continuous Drain Current (T_A= 25°C) ^*1

Continuous Drain Current (T_A= 100°C) ^*1

Pulsed Drain Current (t_p= 10μs, T_A= 25°C)

Power Dissipation (T_A= 25°C) ^*1

-130

-80

°C

I_D

I_DM

P_D

800

-1000

200

Operating Junction Temperature Range

Storage Temperature Range

T_J

-55 ~ +150

T_STG

°C

Thermal Characteristics

Parameter

Symbol

Min.

Typ.

Max.

Unit

Thermal Resistance Junction-to-Air ^*1

625

380

°C /W

R_θJA

Thermal Resistance Junction-to-Air ^*2

Notes:

1. The data tested by surface mounted on minimum recommended pad layout

2. The data tested by surface mounted on a 1 inch²FR-4 board with 2OZ copper

MTM1163A: April 2023 [2.0]

www.gmesemi.com

12 3 4 5 6 7 8

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