Datasheet > TBSS84

TBSS84

更新时间： 2024-11-19 17:00:43

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
6页	553K
描述
-50V, P Channel, Small Signal MOSFETs

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中文翻译

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数据手册

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TBSS84 数据手册

P-Channel Enhancement Mode MOSFET

TBSS84 TBSS84-3L TBSS84W

Features



Advanced trench technology

High-speed switching

Drive circuits can be simple

Parallel use is easy

TBSS84

SOT-23

TBSS84-3L

SOT-23-3L

Halogen free

Qualified to AEC-Q101 standards for high reliability

Typical Applications



P-channel enhancement mode effect transistor



Switching application

Mechanical Data



Case: SOT-23, SOT-23-3L, SOT-323

Molding Compound: UL Flammability Classification Rating 94V-0

Terminals: Matte tin-plated leads; solderability-per MIL-STD-202,

Method 208

TBSS84W

SOT-323

Ordering Information

Part Number

Package

Shipping Quantity

Marking Code

TBSS84

TBSS84-3L

TBSS84W

SOT-23

SOT-23-3L

SOT-323

3000 pcs / Tape & Reel

K84

Maximum Ratings (@ T_A= 25°C unless otherwise specified)

Parameter

Symbol

Value

Unit

Drain-to-Source Voltage

V_DSS

V_GSS

I_D

-50

±12

Gate-to-Source Voltage

Continuous Drain Current (T_A= 25°C ) ^*1

Pulsed Drain Current (t_p= 10μs, T_A= 25°C )

Single Pulse Avalanche Energy ^*3

SOT-23

-130

I_DM

-520

E_AS

0.4

0.36

Power Dissipation (T_A= 25°C ) ^*1

SOT-23-3L

SOT-323

P_D

0.36

0.2

Operating Junction Temperature Range

Storage Temperature Range

T_J

-55 ~ +150

°C

T_STG

Thermal Characteristics

Parameter

Symbol

Value

Unit

SOT-23, SOT-23-3L

SOT-323

350

625

Thermal Resistance Junction-to-Air ^*1

R_θJA

°C/W

MTM0635A: January 2024 [2.1]

www.gmesemi.com

12 3 4 5 6

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