Datasheet > TBSS7002DW

TBSS7002DW

更新时间： 2024-11-19 17:00:55

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
4页	466K
描述
0.3A, 60V, 0.2W, N Channel, Dual MOSFETs

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TBSS7002DW 数据手册

N-Channel Enhancement Mode MOSFET

TBSS7002DW

Features



Low on-resistance

ESD protected gate up to 2kV HBM

High-speed switching

Drive circuits can be simple

Parallel use is easy

Halogen free

Qualified to AEC-Q101 standards for high reliability

Typical Applications



N-channel enhancement mode effect transistor

Switching application

Mechanical Data

SOT-363



Case: SOT-363

Molding Compound: UL Flammability Classification Rating 94V-0

Terminals: Matte Tin-Plated Leads, Solderability-per MIL-STD-202, Method 208

Ordering Information

Part Number

Package

Shipping Quantity

Marking Code

TBSS7002DW

SOT-363

3000 pcs / Tape & Reel

K7D

Maximum Ratings (@ T_A= 25°C unless otherwise specified)

Parameter Symbol

Value

Unit

Drain-Source Voltage

Gate -Source Voltage

V_DSS

V_GSS

I_D

±20

300

800

0.2

Continuous Drain Current

Pulsed Drain Current (t_p≤10μs) ^*4

Power Dissipation ^*1

I_DM

P_D

Thermal Characteristics

Parameter

Symbol

Value

Unit

Thermal Resistance Junction-to-Air ^*1

Thermal Resistance Junction-to-Case ^*1

Thermal Resistance Junction-to-Lead ^*1

Operating Junction Temperature Range

Storage Temperature Range

R_θJA

R_θJC

R_θJL

T_J

368

202

°C /W

°C

228

-55 ~ +150

T_STG

°C

TVM0322A: December 2020

www.gmesemi.com

12 3 4

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