Datasheet > TBSS5003-6L

TBSS5003-6L

更新时间： 2024-11-19 17:01:11

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
5页	663K
描述
50V, N Channel, Small Signal MOSFETs

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数据手册

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TBSS5003-6L 数据手册

N-Channel Enhancement Mode MOSFET

TBSS5003-6L

Features



Low on-resistance

High-speed switching

Drive circuits can be simple

Parallel use is easy

HBM: AEC-Q101-001: H2 (JESD22-A114-B: 2)

Halogen free

Qualified to AEC-Q101 standards for high reliability

Typical Applications



N-channel enhancement mode effect transistor

Switching application

Mechanical Data



Case: SOT-23-6L

Molding Compound: UL Flammability Classification Rating 94V-0

Terminals: Matte tin-plated leads; solderability-per MIL-STD-202,

Method 208

SOT-23-6L

Ordering Information

Part Number

Package

Shipping Quantity

Marking Code

TBSS5003-6L

SOT-23-6L

3000 pcs / Tape & Reel

5003

Maximum Ratings (@ T_A= 25°C unless otherwise specified)

Parameter

Symbol

Value

Unit

Drain-to-Source Voltage

V_DSS

V_GSS

I_D

±20

Gate-to-Source Voltage

Continuous Drain Current ^*1

310

Pulsed Drain Current (t_p= 10μs)

Power Dissipation (T_A= 25°C ) ^*1

Operating Junction Temperature Range

Storage Temperature Range

I_DM

2000

P_D

0.4

T_J

-55 ~ +150

°C

T_STG

Thermal Characteristics

Parameter

Symbol

Min.

Typ.

Max.

Unit

Thermal Resistance Junction to Ambient Air ^*1

R_θJA

310

°C /W

MTM1424A: October 2023 [2.0]

www.gmesemi.com

12 3 4 5

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