Datasheet > TBSS138PDW

TBSS138PDW

更新时间： 2024-11-19 17:02:03

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
6页	691K
描述
0.36A, 60V, 0.31W, N Channel, Dual MOSFETs

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数据手册

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TBSS138PDW 数据手册

Dual N-Channel Enhancement Mode MOSFET

TBSS138PDW

Features



Low on-resistance

Low input capacitance

Fast switching speed

HBM: AEC-Q101-001: H2 (JESD22-A114-B: 2)

Halogen free

Qualified to AEC-Q101 standards for high reliability

Typical Applications



DC-DC Converters

Power management functions

Battery Operated Systems and Solid-State Relays

Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories,

Transistors, etc

Mechanical Data



Case: SOT-363

Molding Compound: UL Flammability Classification Rating 94V-0

Terminals: Matte tin-plated leads; solderability-per MIL-STD-202,

Method 208

SOT-363

Ordering Information

Part Number

Package

SOT-363

Shipping Quantity

Marking Code

138

TBSS138PDW

3000 pcs / Tape & Reel

Maximum Ratings (@ T_A= 25°C unless otherwise specified)

Parameter

Symbol

V_DSS

Value

Unit

Drain-to-Source Voltage

Gate-to-Source Voltage

V_GSS

±20

Continuous Drain Current (T_A= 25°C)^*1

Continuous Drain Current (T_A= 70°C)^*1

Pulsed Drain Current (t_p= 10μs, T_A= 25°C )

Single Pulse Avalanche Energy ^*4

Power Dissipation (T_A= 25°C) ^*1

Operating Junction Temperature Range

Storage Temperature Range

360

°C

I_D

290

I_DM

E_AS

P_D

1500

0.2

350

T_J

-55 ~ +150

T_STG

°C

MTM0777A: September 2023 [2.3]

www.gmesemi.com

12 3 4 5 6

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