Datasheet > TBSS138P

TBSS138P

更新时间： 2024-11-19 17:01:39

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
6页	688K
描述
0.36A, 60V, 0.35W, N Channel, Small Signal MOSFETs

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数据手册

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TBSS138P 数据手册

N-Channel Enhancement Mode MOSFET

TBSS138P

Features



Low on-resistance

Low input capacitance

Fast switching speed

HBM: AEC-Q101-001: H2 (JESD22-A114-B: 2)

Halogen free

Qualified to AEC-Q101 standards for high reliability

Typical Applications



DC-DC converters

Power management functions

Battery operated systems and solid-state relays

Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc.

Mechanical Data

SOT-23



Case: SOT-23

Molding Compound: UL Flammability Classification Rating 94V-0

Terminals: Matte Tin-Plated Leads, Solderability-per MIL-STD-202, Method 208

Ordering Information

Part Number

Package

Shipping Quantity

Marking Code

TBSS138P

SOT-23

3000 pcs / Tape & Reel

138

Maximum Ratings (@ T_A= 25°C unless otherwise specified)

Parameter

Symbol

Value

Unit

Drain-to-Source Voltage

V_DSS

V_GSS

±20

Gate-to-Source Voltage

Continuous Drain Current (T_A= 25°C ) ^*1

Continuous Drain Current (T_A= 70°C ) ^*1

Pulsed Drain Current (t_p= 10μs, T_A= 25°C )

Single Pulse Avalanche Energy ^*3

Power Dissipation (T_A= 25°C ) ^*1

Operating Junction Temperature Range

Storage Temperature Range

360

°C

I_D

290

I_DM

E_AS

P_D

1500

0.2

350

T_J

-55 ~ +150

T_STG

°C

Thermal Characteristics

Parameter

Symbol

Min.

Typ.

Max.

Unit

Thermal Resistance Junction-to-Air ^*1

R_θJA

335

357

°C /W

MTM0225A: September 2023 [2.0]

www.gmesemi.com

12 3 4 5 6

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