Datasheet > TBSS138

TBSS138

更新时间： 2024-04-09 19:00:05

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
3页	357K
描述
0.2A, 50V, 0.3W, N Channel, Small Signal MOSFETs

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TBSS138 数据手册

Product Specification

N-Channel Logic Level Enhancement Mode Field Effect Transistor

TBSS138

FEATURES



Low on-resisrance

Low gate threshold voltage

Low input capacitance

Fast switching speed

Low input/output leakage

Halogen free



Qualified to AEC-Q101 standards for high reliability

SOT-23

ORDERING INFORMATION

Type No.

TBSS138

Marking

K38

Package Code

SOT-23

MAXIMUM RATING @ Ta=25℃ unless otherwise specified

Symbol

Parameter

Value

Units

V_DSS

Drain-Source voltage

V_DGR

V_GSS

I_D

Drain-Gate voltage R_GS≤20KΩ

Gate-Surce Voltage

±20

200

300

417

Drain current

-continuous

℃/W

P_D

Power Dissipation

R_θ

Thermal Resistance,Junction-to-Ambient

T_J, T_STG

Junction and Storage Temperature

-55 to +150

℃

MTM0072A

www.gmesemi.com

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