Datasheet > TBN4228ESO2

TBN4228ESO2

更新时间： 2024-09-13 15:53:51

品牌	Logo	应用领域
可天士 - KODENSHI		/
页数	文件大小	规格书
6页	258K
描述
Transistor,

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数据手册

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TBN4228ESO2 数据手册

TBN4228 Series

Semiconductor

Si NPN Transistor

Unit in mm

SOT-323

□ Applications

2.1±0.1

1.25±0.05

- VHF and UHF low noise amplifier

□ Features

- High gain bandwidth product

f_T= 9 GHz at V_CE= 3 V, I_C= 5 mA

- High power gain

|S₂₁|²= 6.6 dB at V_CE= 3 V, I_C= 5 mA, f = 2 GHz

|S₂₁|²= 12 dB at V_CE= 3 V, I_C= 10 mA, f = 1 GHz

- Low noise figure

0.1 Min.

NF = 1.9 dB at V_CE= 3 V, I_C= 5 mA, f = 2 GHz

NF = 1.2 dB at V_CE= 3 V, I_C= 3 mA, f = 1 GHz

Pin Configuration

1. Base

2. Emitter

3. Collector

□ Absolute Maximum Ratings (T_A= 25 ℃)

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

Symbol

BV_CBO

BV_CEO

BV_EBO

I_C

Ratings

Unit

℃

Total Power Dissipation

Operating Junction Temperature

Storage Temperature

P_tot

150

T_j

T_stg

-65 ~ 150

℃

Caution : Electro Static Discharge sensitive device

12 3 4 5 6

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