Datasheet > TBLS027N04TH-5DL8

TBLS027N04TH-5DL8

更新时间： 2024-11-22 17:02:07

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
6页	611K
描述
40V, N Channel MOSFETs

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TBLS027N04TH-5DL8 数据手册

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N-Channel Enhancement Mode MOSFET

TBLS027N04TH-5DL8

Features



Advanced shielded-gate technology

Ultra-low on-resistance and gate-charge

Superior thermal resistance

HBM: AEC-Q101-001: H1B (JESD22-A114-B: 1B)

Halogen free

Qualified to AEC-Q101 standards for high reliability

Mechanical Data



Case: PDFN5×6-8L

Molding Compound: UL Flammability Classification Rating 94V-0

Terminals: Matte tin-plated leads; solderability-per MIL-STD-202,

Method 208

PDFN5×6-8L

Ordering Information

Part Number

Package

Shipping Quantity

Marking Code

TBLS027N04TH-5DL8

PDFN5×6-8L

5000 pcs / Tape & Reel

027N04TH

Maximum Ratings (@ T_C= 25°C unless otherwise specified)

Parameter

Drain-to-Source Voltage

Symbol

Value

Unit

V_DSS

V_GSS

±20

Gate-to-Source Voltage

Continuous Drain Current (T_C= 25°C, Silicon limited) ^*1

Continuous Drain Current (T_C= 100°C, Silicon limited) ^*1

Continuous Drain Current (T_A= 25°C ) ^*2

Continuous Drain Current (T_A= 100°C ) ^*2

Pulsed Drain Current (t_p= 10μs, T_C= 25°C ) ^*1

Single Pulse Avalanche Energy ^*3

145

103

I_D

I_DM

580

E_AS

150

°C

Power Dissipation (T_C= 25°C)

107

P_D

Power Dissipation (T_A= 25°C) ^*2

3.8

Operating Junction Temperature Range

Storage Temperature Range

T_J

-55 ~ +175

T_STG

Thermal Characteristics

Parameter

Symbol

Min.

Typ.

Max.

Unit

Thermal Resistance Junction-to-Case

Thermal Resistance Junction-to-Air ^*2

R_θJC

R_θJA

1.1

1.4

°C /W

MTM1487A: December 2023 [2.0]

www.gmesemi.com

12 3 4 5 6

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