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TBL990N10D PDF预览

TBL990N10D

更新时间: 2024-04-09 19:02:45
品牌 Logo 应用领域
银河微电 - BL Galaxy Electrical /
页数 文件大小 规格书
6页 537K
描述
100V, N Channel MOSFETs

TBL990N10D 数据手册

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N-Channel Enhancement Mode MOSFET  
TBL990N10D  
Features  
Reliable and Rugged  
Green device available  
Halogen free  
Qualified to AEC-Q101 standards for high reliability  
Applications  
Synchronous Rectification  
Motor Control  
Portable equipment application  
Mechanical Data  
Case: TO-252  
Molding Compound: UL Flammability Classification Rating 94V-0  
Terminals: Matte tin-plated leads; solderability-per MIL-STD-202, Method 208  
TO-252  
Ordering Information  
Part Number  
Package  
Shipping Quantity  
Marking Code  
TBL990N10D  
TO-252  
80 pcs / Tube & 2500 pcs / Tape & Reel  
990N10D  
Maximum Ratings (@ TC = 25°C unless otherwise specified)  
Parameter  
Drain-to-Source Voltage  
Symbol  
Unit  
Value  
VDSS  
VGSS  
100  
V
V
Gate-to-Source Voltage  
±20  
Continuous Drain Current (TC = 25°C)  
Continuous Drain Current (TC = 100°C)  
Continuous Drain Current (TA = 25°C) *1  
Continuous Drain Current (TA = 100°C) *1  
Pulsed Drain Current (tp = 10μs, TC = 25°C)  
Single Pulse Avalanche Energy *3  
Power Dissipation (TC = 25°C)  
15  
A
9.5  
A
ID  
3.6  
2.3  
A
A
IDM  
EAS  
PD  
60  
A
12  
mJ  
W
°C  
°C  
39  
Operating Junction Temperature Range  
Storage Temperature Range  
TJ  
-55 ~ +150  
-55 ~ +150  
TSTG  
Thermal Characteristics  
Parameter  
Symbol  
Min.  
Typ.  
Max.  
Unit  
Thermal Resistance Junction-to-Case  
Thermal Resistance Junction-to-Air *1  
RθJC  
RθJA  
-
-
2.5  
25  
3.2  
40  
°C /W  
°C /W  
MTM1449A: January 2024 [2.1]  
www.gmesemi.com  
1

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