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TBL950N10T-5DL8 PDF预览

TBL950N10T-5DL8

更新时间: 2024-09-22 17:02:03
品牌 Logo 应用领域
银河微电 - BL Galaxy Electrical /
页数 文件大小 规格书
5页 862K
描述
15.5A, 100V, 35W, N Channel, Power MOSFETs

TBL950N10T-5DL8 数据手册

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N-Channel Enhancement Mode MOSFET  
TBL950N10T-5DL8  
Features  
High power and current handing capability  
Halogen free  
Qualified to AEC-Q101 standards for high reliability  
Mechanical Data  
Case: PDFN5×6-8L  
Molding Compound: UL Flammability Classification Rating 94V-0  
Terminals: Matte tin-plated leads; solderability-per MIL-STD-202,  
Method 208  
PDFN5×6-8L  
Ordering Information  
Part Number  
Package  
PDFN5×6-8L  
Shipping Quantity  
Marking Code  
TBL950N10T-5DL8  
5000 pcs / Tape & Reel  
950N10T  
Maximum Ratings (@ TC = 25°C unless otherwise specified)  
Parameter  
Drain-to-Source Voltage  
Symbol  
Value  
Unit  
VDSS  
VGSS  
100  
±20  
15.5  
9.8  
62  
V
V
Gate-to-Source Voltage  
Continuous Drain Current (TC = 25°C ) *5  
Continuous Drain Current (TC = 100°C) *5  
Pulsed Drain Current *3  
A
ID  
A
IDM  
A
Single Pulse Avalanche Energy *3, 6  
EAS  
5
mJ  
Thermal Characteristics  
Parameter  
Symbol  
Value  
Unit  
Power Dissipation (TC = 25°C) *2  
PD  
RθJC  
RθJA  
TJ  
35  
W
°C /W  
°C /W  
°C  
Thermal Resistance Junction-to-Case *1  
Thermal Resistance Junction-to-Air *4  
Operating Junction Temperature Range  
Storage Temperature Range  
3.05  
62.5  
-55 ~ +150  
-55 ~ +150  
TSTG  
°C  
MTM0737A: September 2022 [1.1]  
www.gmesemi.com  
1

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