Datasheet > TBL800N06R

TBL800N06R

更新时间： 2024-11-22 17:01:03

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
5页	549K
描述
60V, N Channel MOSFETs

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中文翻译

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数据手册

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TBL800N06R 数据手册

N-Channel Enhancement Mode MOSFET

TBL800N06R

Features



Advanced trench technology

Super low gate charge

Fast switching speed

Halogen free

Qualified to AEC-Q101 standards for high reliability

Mechanical Data



Case: SOT-223

Molding Compound: UL Flammability Classification Rating 94V-0

Terminals: Matte tin-plated leads; solderability-per MIL-STD-202, Method 208

SOT-223

Ordering Information

Part Number

Package

SOT-223

Shipping Quantity

Marking Code

TBL800N06R

4000 pcs / Tape & Reel

800N06R

Maximum Ratings (@ T_A= 25°C unless otherwise specified)

Parameter

Drain-to-Source Voltage

Symbol

Value

Unit

V_DSS

V_GSS

Gate-to-Source Voltage

±20

Continuous Drain Current (T_C= 25°C)

Continuous Drain Current (T_A= 25°C) ^*1

Pulsed Drain Current (t_p= 10μs, T_A= 25°C )

Single Pulse Avalanche Energy ^*3

Power Dissipation (T_C= 25°C)

I_D

3.6

I_DM

E_AS

8.3

°C

P_D

Power Dissipation (T_A= 25°C) ^*1

Operating Junction Temperature Range

Storage Temperature Range

T_J

-55 ~ +150

T_STG

Thermal Characteristics

Parameter

Symbol

Min.

Typ.

Max.

Unit

Thermal Resistance Junction-to-Case

Thermal Resistance Junction-to-Air ^*1

R_θJC

R_θJA

°C /W

MTM1499A: March 2024 [2.0]

www.gmesemi.com

12 3 4 5

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