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TBL800N06D PDF预览

TBL800N06D

更新时间: 2024-11-19 17:01:31
品牌 Logo 应用领域
银河微电 - BL Galaxy Electrical /
页数 文件大小 规格书
6页 729K
描述
18A, 60V, 50W, N Channel, Power MOSFETs

TBL800N06D 数据手册

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N-Channel Enhancement Mode MOSFET  
TBL800N06D  
Features  
Advanced trench technology  
Super low gate charge  
Fast switching speed  
Halogen free  
Qualified to AEC-Q101 standards for high reliability  
Mechanical Data  
Case: TO-252  
Molding Compound: UL Flammability Classification Rating 94V-0  
Terminals: Matte tin-plated leads; solderability-per MIL-STD-202, Method 208  
TO-252  
Ordering Information  
Part Number  
Package  
TO-252  
Shipping Quantity  
Marking Code  
TBL800N06D  
80 pcs / Tube & 2500 pcs / Tape & Reel  
800N06D  
Maximum Ratings (@ TC = 25°C unless otherwise specified)  
Parameter  
Drain-to-Source Voltage  
Symbol  
Value  
Unit  
VDSS  
VGSS  
60  
V
V
Gate-to-Source Voltage  
±20  
Continuous Drain Current (TC = 25°C)  
Continuous Drain Current (TC = 100°C)  
Continuous Drain Current (TA = 25°C) *1  
Continuous Drain Current (TA = 100°C) *1  
Pulsed Drain Current (tp = 10μs, TC = 25°C )  
Single Pulse Avalanche Energy *3  
Power Dissipation (TC = 25°C)  
13  
A
8.2  
A
ID  
3.7  
A
2.3  
52  
A
IDM  
A
EAS  
10  
mJ  
W
W
°C  
°C  
31  
PD  
Power Dissipation (TA = 25°C) *1  
Operating Junction Temperature Range  
Storage Temperature Range  
2.5  
TJ  
-55 ~ +150  
-55 ~ +150  
TSTG  
Thermal Characteristics  
Parameter  
Symbol  
Min.  
Typ.  
Max.  
Unit  
Thermal Resistance Junction-to-Case  
Thermal Resistance Junction-to-Air *1  
RθJC  
RθJA  
-
-
3.8  
25  
4
°C /W  
°C /W  
50  
MTM1271A: March 2024 [2.0]  
www.gmesemi.com  
1

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