Datasheet > TBL6306P

TBL6306P

更新时间： 2024-04-09 19:03:03

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
5页	664K
描述
-20V, Dual P Channel MOSFETs

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数据手册

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TBL6306P 数据手册

P-Channel Enhancement Mode MOSFET

TBL6306P

Features



Low gate charge

High performance trench technology for extremely low R_DS(ON)

Halogen free

Qualified to AEC-Q101 standards for high reliability

Typical Applications



DC-DC Converters

Power management functions

Battery Operated Systems and Solid-State Relays

Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories,

Transistors, etc

Mechanical Data



Case: SOT-363

Molding Compound: UL Flammability Classification Rating 94V-0

Terminals: Matte tin-plated leads; solderability-per MIL-STD-202,

Method 208

SOT-363

Ordering Information

Part Number

Package

SOT-363

Shipping Quantity

Marking Code

TBL6306P

3000 pcs / Tape & Reel

Maximum Ratings (@ T_A= 25°C unless otherwise specified)

Parameter

Symbol

Value

Unit

Drain-to-Source Voltage

Gate-to-Source Voltage

V_DSS

V_GSS

I_D

-20

±12

-0.6

-2

Continuous Drain Current

Pulsed Drain Current

I_DM

Thermal Characteristics

Parameter

Symbol

Value

Unit

Power Dissipation

P_D

R_θJA

R_θJC

T_J

0.3

477

°C /W

°C

Thermal Resistance Junction-to-Air ^*1

Thermal Resistance Junction-to-Case

Operating Junction Temperature Range

Storage Temperature Range

232

-55 ~ +150

T_STG

°C

MTM5040A: August 2022 [2.0]

www.gmesemi.com

12 3 4 5

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