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TBL6202PR PDF预览

TBL6202PR

更新时间: 2024-11-19 17:01:15
品牌 Logo 应用领域
银河微电 - BL Galaxy Electrical /
页数 文件大小 规格书
6页 767K
描述
1.9A, 60V, 1.8W, P Channel, Power MOSFETs

TBL6202PR 数据手册

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P-Channel Enhancement Mode MOSFET  
TBL6202PR  
Features  
Advanced trench technology  
Low gate charge  
Fast switching speed  
Halogen free  
Qualified to AEC-Q101 standards for high reliability  
Mechanical Data  
Case: SOT-223  
Molding Compound: UL Flammability Classification Rating 94V-0  
Terminals: Matte tin-plated leads; solderability-per MIL-STD-202, Method 208  
SOT-223  
Ordering Information  
Part Number  
Package  
SOT-223  
Shipping Quantity  
Marking Code  
TBL6202PR  
4000 pcs / Tape & Reel  
D1  
Maximum Ratings (@ TA = 25°C unless otherwise specified)  
Parameter  
Drain-to-Source Voltage  
Symbol  
Value  
Unit  
VDSS  
VGSS  
-60  
V
V
Gate-to-Source Voltage  
±20  
Continuous Drain Current (TC = 25°C)  
Continuous Drain Current (TA = 25°C) *1  
Continuous Drain Current (TA = 70°C) *1  
Pulsed Drain Current (tp = 10μs, TA = 25°C )  
Single Pulse Avalanche Energy *3  
Power Dissipation (TC = 25°C)  
-4.2  
A
ID  
-2.5  
A
-2  
A
IDM  
-20  
A
EAS  
14  
5
mJ  
W
W
°C  
°C  
PD  
Power Dissipation (TA = 25°C) *1  
Operating Junction Temperature Range  
Storage Temperature Range  
1.8  
TJ  
-55 ~ +150  
-55 ~ +150  
TSTG  
Thermal Characteristics  
Parameter  
Symbol  
Min.  
Typ.  
Max.  
Unit  
Thermal Resistance Junction-to-Case  
Thermal Resistance Junction-to-Air *1  
RθJC  
RθJA  
-
-
22  
65  
25  
70  
°C /W  
°C /W  
MTM5044A: January 2024 [2.2]  
www.gmesemi.com  
1

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