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TBL6202 PDF预览

TBL6202

更新时间: 2024-11-19 17:01:43
品牌 Logo 应用领域
银河微电 - BL Galaxy Electrical /
页数 文件大小 规格书
6页 665K
描述
1.9A, 60V, 0.35W, P Channel, Power MOSFETs

TBL6202 数据手册

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P-Channel Enhancement Mode MOSFET  
TBL6202  
Features  
Advanced trench technology  
Low gate charge  
Fast switching speed  
Halogen free  
Qualified to AEC-Q101 standards for high reliability  
Mechanical Data  
Case: SOT-23  
Molding Compound: UL Flammability Classification Rating 94V-0  
Terminals: Matte tin-plated leads; solderability-per MIL-STD-202, Method 208  
SOT-23  
Ordering Information  
Part Number  
Package  
SOT-23  
Shipping Quantity  
Marking Code  
TBL6202  
3000 pcs / Tape & Reel  
D1  
Maximum Ratings (@ TA = 25°C unless otherwise specified)  
Parameter  
Drain-to-Source Voltage  
Symbol  
Value  
Unit  
VDSS  
VGSS  
-60  
±20  
V
V
Gate-to-Source Voltage  
Continuous Drain Current (TC = 25°C)  
Continuous Drain Current (TA = 25°C) *1  
Continuous Drain Current (TA = 70°C) *1  
Pulsed Drain Current (tp = 10μs, TA = 25°C)  
Pulsed Drain Current (tp = 300μs, TA = 25°C)  
Single Pulse Avalanche Energy *4  
Power Dissipation (TC = 25°C)  
-2.7  
A
ID  
-1.9  
A
-1.5  
A
-19  
A
IDM  
-7.6  
A
EAS  
14  
mJ  
W
W
W
°C  
°C  
2
Power Dissipation (TA = 25°C) *1  
PD  
1
Power Dissipation (TA = 25°C) *2  
0.35  
-55 ~ +150  
-55 ~ +150  
Operating Junction Temperature Range  
Storage Temperature Range  
TJ  
TSTG  
Thermal Characteristics  
Parameter  
Symbol  
Min.  
Typ.  
Max.  
Unit  
Thermal Resistance Junction-to-Case  
Thermal Resistance Junction-to-Air *1  
Thermal Resistance Junction-to-Air *2  
RθJC  
-
-
-
-
62  
°C /W  
°C /W  
°C /W  
105  
200  
125  
357  
RθJA  
MTM0330A: January 2024 [2.1]  
www.gmesemi.com  
1

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