Datasheet > TBL500P10TXB

TBL500P10TXB

更新时间： 2024-04-09 18:59:15

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
5页	569K
描述
33A, 100V, 104W, P Channel, Power MOSFETs

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

TBL500P10TXB 数据手册

P-Channel Enhancement Mode MOSFET

TBL500P10TXB

Features



Super low gate charge

Green device available

Excellent c_dV/ d_teffect decline

Advanced high cell density trench technology

JESD22-A114-B ESD rating of class 1A per human body model

Halogen free

Qualified to AEC-Q101 standards for high reliability

Mechanical Data



Case: TO-263

TO-263

Molding Compound: UL Flammability Classification Rating 94V-0

Terminals: Matte tin-plated leads; solderability-per MIL-STD-202, Method 208

Ordering Information

Part Number

Package

TO-263

Shipping Quantity

Marking Code

TBL500P10TXB

50 pcs / Tube & 800 pcs / Tape & Reel

500P10TXB

Maximum Ratings (@ T_A= 25℃ unless otherwise specified)

Parameter

Drain-to-Source Voltage

Symbol

Value

Unit

V_DSS

V_GSS

-100

±20

Gate-to-Source Voltage

Continuous Drain Current (T_C= 25°C)

Continuous Drain Current (T_C= 100°C)

Pulsed Drain Current (t_p= 10μs, T_C= 25°C )

Single Pulse Avalanche Energy ^*3

Power Dissipation (T_C= 25°C)

-33

I_D

-21

I_DM

E_AS

P_D

-132

105

°C

104

Operating Junction Temperature Range

Storage Temperature Range

T_J

-55 ~ +150

T_STG

Thermal Characteristics

Parameter

Symbol

Min.

Typ.

Max.

Unit

Thermal Resistance Junction-to-Case

Thermal Resistance Junction-to-Air ^*1

R_θJC

R_θJA

1.2

°C /W

MTM1173A: April 2023 [1.0]

www.gmesemi.com

12 3 4 5

中文翻译

下载PDF

与TBL500P10TXB相关器件

型号	品牌	描述	获取价格	数据表
TBL5384V	BL Galaxy Electrical	50V, -60V, N+P Channel MOSFETs	获取价格
TBL600P04-6L	BL Galaxy Electrical	4A, 40V, 1.7W, P Channel, Power MOSFETs	获取价格
TBL601-TP	MCC	Bridge Rectifier Diode,	获取价格
TBL610	MCC	Tape&Reel:1.8Kpcs/Reel;	获取价格
TBL6202	BL Galaxy Electrical	1.9A, 60V, 0.35W, P Channel, Power MOSFETs	获取价格
TBL6202P-3DL8	BL Galaxy Electrical	3A, 60V, 2.5W, P Channel, Power MOSFETs	获取价格