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TBL500P10TXB PDF预览

TBL500P10TXB

更新时间: 2024-11-22 17:00:55
品牌 Logo 应用领域
银河微电 - BL Galaxy Electrical /
页数 文件大小 规格书
5页 569K
描述
33A, 100V, 104W, P Channel, Power MOSFETs

TBL500P10TXB 数据手册

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P-Channel Enhancement Mode MOSFET  
TBL500P10TXB  
Features  
Super low gate charge  
Green device available  
Excellent cdV / dt effect decline  
Advanced high cell density trench technology  
JESD22-A114-B ESD rating of class 1A per human body model  
Halogen free  
Qualified to AEC-Q101 standards for high reliability  
Mechanical Data  
Case: TO-263  
TO-263  
Molding Compound: UL Flammability Classification Rating 94V-0  
Terminals: Matte tin-plated leads; solderability-per MIL-STD-202, Method 208  
Ordering Information  
Part Number  
Package  
TO-263  
Shipping Quantity  
Marking Code  
TBL500P10TXB  
50 pcs / Tube & 800 pcs / Tape & Reel  
500P10TXB  
Maximum Ratings (@ TA = 25unless otherwise specified)  
Parameter  
Drain-to-Source Voltage  
Symbol  
Value  
Unit  
VDSS  
VGSS  
-100  
±20  
V
V
Gate-to-Source Voltage  
Continuous Drain Current (TC = 25°C)  
Continuous Drain Current (TC = 100°C)  
Pulsed Drain Current (tp = 10μs, TC = 25°C )  
Single Pulse Avalanche Energy *3  
Power Dissipation (TC = 25°C)  
-33  
A
ID  
-21  
A
IDM  
EAS  
PD  
-132  
A
105  
mJ  
W
°C  
°C  
104  
Operating Junction Temperature Range  
Storage Temperature Range  
TJ  
-55 ~ +150  
-55 ~ +150  
TSTG  
Thermal Characteristics  
Parameter  
Symbol  
Min.  
Typ.  
Max.  
Unit  
Thermal Resistance Junction-to-Case  
Thermal Resistance Junction-to-Air *1  
RθJC  
RθJA  
-
-
-
-
1.2  
35  
°C /W  
°C /W  
MTM1173A: April 2023 [1.0]  
www.gmesemi.com  
1

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