Datasheet > TBL500P06X-S8

TBL500P06X-S8

更新时间： 2024-04-09 19:01:17

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
6页	758K
描述
-5.7A, -60V, 3W, P Channel, Power MOSFETs

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数据手册

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TBL500P06X-S8 数据手册

P-Channel Enhancement Mode MOSFET

TBL500P06X-S8

Features



Low R_DS(ON)

100% unclamped inductive switching

JESD22-A114-B ESD rating of class 2 per human body model

Halogen free

Qualified to AEC-Q101 standards for high reliability

Typical Applications



Backlighting

Power management functions

DC-DC Converters

Mechanical Data



Case: SOP-8



Molding Compound, UL Flammability Classification Rating 94V-0

Terminals: Matte Tin Plated Leads, Solderable Per MIL-STD-202,

Method 208

SOP-8

Ordering Information

Part Number

Package

SOP-8

Shipping Quantity

Marking Code

TBL500P06X-S8

4000 pcs / Tape & Reel

500P06X

Maximum Ratings (@ T_A= 25°C unless otherwise specified)

Parameter

Drain-to-Source Voltage

Symbol

V_DSS

Value

-60

±20

-8

Unit

Gate-to-Source Voltage

V_GSS

Continuous Drain Current (T_C= 25°C )

Continuous Drain Current (T_A= 25°C) ^*1

Continuous Drain Current (T_A= 100°C) ^*1

Pulsed Drain Current (t_p= 10μs, T_A= 25°C )

Single Pulse Avalanche Energy ^*3

Power Dissipation (T_A= 25°C )

I_D

-5.7

-3.6

-57

I_DM

E_AS

P_D

°C

Operating Junction Temperature Range

Storage Temperature Range

T_J

-55 ~ +150

T_STG

Thermal Characteristics

Parameter

Symbol

Min.

Typ.

Max.

Unit

Thermal Resistance Junction-to-Air ^*1

R_θJA

°C /W

MTM1295A: July 2023 [2.0]

www.gmesemi.com

12 3 4 5 6

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