Datasheet > TBL500P06X-3DL8

TBL500P06X-3DL8

更新时间： 2024-04-09 19:01:29

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
6页	720K
描述
18A, 60V, 33W, P Channel, Power MOSFETs

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中文翻译

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数据手册

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TBL500P06X-3DL8 数据手册

P-Channel Enhancement Mode MOSFET

TBL500P06X-3DL8

Features



Low R_DS(ON)

100% unclamped inductive switching

JESD22-A114-B ESD rating of class 2 per human body model

Halogen free

Qualified to AEC-Q101 standards for high reliability

Typical Applications



Backlighting

Power management functions

DC-DC Converters

Mechanical Data



Case: PDFN3×3-8L



Molding Compound, UL Flammability Classification Rating 94V-0

PDFN3×3-8L

Terminals: Matte Tin Plated Leads, Solderable Per MIL-STD-202, Method 208

Ordering Information

Part Number

Package

Shipping Quantity

Marking Code

TBL500P06X-3DL8

PDFN3×3-8L

5000 pcs / Tape & Reel

500P06X

Maximum Ratings (@ T_A= 25°C unless otherwise specified)

Parameter

Drain-to-Source Voltage

Symbol

V_DSS

Value

-60

Unit

Gate-to-Source Voltage

V_GSS

±20

Continuous Drain Current (T_C= 25°C)

Continuous Drain Current (T_C= 100°C)

Continuous Drain Current (T_A= 25°C) ^*1

Continuous Drain Current (T_A= 100°C) ^*1

Pulsed Drain Current (t_p= 10μs, T_C= 25°C )

Single Pulse Avalanche Energy ^*4

Power Dissipation (T_C= 25°C)

-18

-13

I_D

-6.1

-4.2

I_DM

-108

E_AS

°C

Power Dissipation (T_A= 25°C) ^*1

Power Dissipation (T_A= 25°C) ^*2

Operating Junction Temperature Range

Storage Temperature Range

P_D

2.8

1.2

T_J

-55 to +175

T_STG

MTM1155A: July 2023 [2.1]

www.gmesemi.com

12 3 4 5 6

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