Datasheet > TBL500P06D

TBL500P06D

更新时间： 2024-04-09 19:03:23

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
5页	408K
描述
50A, 60V, 125W, P Channel, Power MOSFETs

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中文翻译

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数据手册

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TBL500P06D 数据手册

P-Channel Enhancement Mode MOSFET

TBL500P06D

Features



Low R_DS(ON)

100% unclamped inductive switching

Halogen free

Qualified to AEC-Q101 standards for high reliability

Typical Applications



Backlighting

Power management functions

DC-DC Converters

Mechanical Data



Case: TO-252



Molding Compound, UL Flammability Classification Rating 94V-0

TO-252

Terminals: Matte Tin Plated Leads, Solderable Per MIL-STD-202, Method 208

Ordering Information

Part Number

Package

Shipping Quantity

Marking Code

TBL500P06D

TO-252

80 pcs / Tube or 2500 pcs / Tape & Reel

500P06D

Maximum Ratings (@ T_C= 25°C unless otherwise specified)

Parameter

Drain-to-Source Voltage

Symbol

V_DSS

V_GSS

I_D

Value

-60

Unit

Gate-to-Source Voltage

±20

Continuous Drain Current ^*1

Pulsed Drain Current ^*1

-50

I_DM

-200

Thermal Characteristics

Parameter

Symbol

Value

Unit

Power Dissipation ^*2

P_D

R_θJC

T_J

125

°C /W

°C

Thermal Resistance Junction-to-Case

Operating Junction Temperature Range

Storage Temperature Range

-55 ~ +150

T_STG

°C

MTM0523A: September 2021

www.gmesemi.com

12 3 4 5

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