Datasheet > TBL500P06-3DL8

TBL500P06-3DL8

更新时间： 2024-11-19 17:02:15

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
6页	720K
描述
18A, 60V, 1.2W, P Channel, Power MOSFETs

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中文翻译

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数据手册

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TBL500P06-3DL8 数据手册

P-Channel Enhancement Mode MOSFET

TBL500P06-3DL8

Features



Low R_DS(ON)

100% unclamped inductive switching

Halogen free

Qualified to AEC-Q101 standards for high reliability

Typical Applications



Backlighting

Power management functions

DC-DC Converters

Mechanical Data



Case: PDFN3×3-8L



Molding Compound, UL Flammability Classification Rating 94V-0

PDFN3×3-8L

Terminals: Matte Tin Plated Leads, Solderable Per MIL-STD-202, Method 208

Ordering Information

Part Number

Package

Shipping Quantity

Marking Code

TBL500P06-3DL8

PDFN3×3-8L

5000 pcs / Tape & Reel

500P06

Maximum Ratings (@ T_A= 25℃ unless otherwise specified)

Parameter

Drain-to-Source Voltage

Symbol

V_DSS

Value

-60

Unit

Gate-to-Source Voltage

V_GSS

±20

-6.1

-4.2

-18

Continuous Drain Current ^{( Note2 )}V_GS= -10V

Continuous Drain Current ^{( Note3 )}V_GS= -10V

Steady

State

T_A= 25°C

T_A= 100°C

T_C= 25°C

T_C= 100°C

I_D

Steady

State

-12

Maximum Continuous Body Diode Forward Current ^{( Note2 )}

Pulsed Drain Current (10μs Pulse, Duty Cycle = 1%)

Pulsed Drain Current (t_p= 10μs, T_C= 25°C)

I_S

-2

I_DM

I_AS

-32

-108

-24.8

30.8

Single Pulse Avalanche Current ^{( Note4 )}(L = 0.1 mH)

Single Pulse Avalanche Energy ^{( Note4 )}(L = 0.1 mH)

E_AS

MTM0512A: June 2023 [1.1]

www.gmesemi.com

12 3 4 5 6

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