Datasheet > TBL350P04-S8

TBL350P04-S8

更新时间： 2024-04-09 18:59:34

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
5页	411K
描述
-40V, P Channel MOSFETs

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数据手册

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TBL350P04-S8 数据手册

P-Channel Enhancement Mode MOSFET

TBL350P04-S8

Features



Advanced Trench technology

Excellent R_DS(ON)and low gate charge

HBM: AEC-Q101-001: H1A (JESD22-A114-B: 1A)

Halogen free

Qualified to AEC-Q101 standards for high reliability

Typical Applications



PWM applications

Power management functions

Load switch

Mechanical Data



Case: SOP-8



Molding Compound, UL Flammability Classification Rating 94V-0

SOP-8

Terminals: Matte Tin Plated Leads, Solderable Per MIL-STD-202, Method 208

Ordering Information

Part Number

Package

Shipping Quantity

Marking Code

TBL350P04-S8

SOP-8

4000 pcs / Tape & Reel

350P04

Maximum Ratings (@ T_A= 25°C unless otherwise specified)

Parameter

Drain-to-Source Voltage

Symbol

Value

Unit

V_DSS

V_GSS

-40

±20

Gate-to-Source Voltage

Continuous Drain Current (T_A= 25°C) ^*1

Continuous Drain Current (T_A= 100°C) ^*1

Pulsed Drain Current ^*1

-6.6

I_D

-4.2

I_DM

E_AS

P_D

-26

Single Pulse Avalanche Energy ^*3

Power Dissipation (T_A= 25°C) ^*1

Operating Junction Temperature Range

Storage Temperature Range

°C

2.5

T_J

-55 ~ +150

T_STG

Thermal Characteristics

Parameter

Symbol

Min.

Typ.

Max.

Unit

Thermal Resistance Junction-to-Air ^*1

R_θJA

°C /W

MTM1373A: August 2023 [P]

www.gmesemi.com

12 3 4 5

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