Datasheet > TBL3400

TBL3400

更新时间： 2024-04-09 19:02:20

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
7页	771K
描述
5.7A, 30V, 1.4W, N Channel, Power MOSFETs

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TBL3400 数据手册

N-Channel Enhancement Mode MOSFET

TBL3400 TBL3400-3L

Features



Electrostatic sensitive devices

R_DS(ON)< 26.5mΩ @ V_GS= 10V

R_DS(ON)< 32mΩ @ V_GS= 4.5V

R_DS(ON)< 48mΩ @ V_GS= 2.5V

Halogen free

TBL3400

SOT-23

TBL3400-3L

SOT-23-3L

Qualified to AEC-Q101 standards for high reliability

Mechanical Data



Case: SOT-23, SOT-23-3L

Molding Compound: UL Flammability Classification Rating 94V-0

Terminals: Matte tin-plated leads; solderability-per MIL-STD-202,

Method 208

Ordering Information

Part Number

Package

Shipping Quantity

Marking Code

TBL3400

SOT-23

3000 pcs / Tape & Reel

3400

TBL3400-3L

SOT-23-3L

Maximum Ratings (@ T_A= 25°C unless otherwise specified)

Parameter

Symbol

Value

Unit

Drain-to-Source Voltage

V_DSS

V_GSS

Gate-to-Source Voltage

±12

Continuous Drain Current (T_A= 25°C ) ^*1

Continuous Drain Current (T_A= 70°C ) ^*1

Pulsed Drain Current (t_p= 10μs, T_A= 25°C )

Single Pulse Avalanche Energy ^*3

Power Dissipation (T_A= 25°C ) ^*1

Operating Junction Temperature Range

Storage Temperature Range

5.7

I_D

4.7

I_DM

E_AS

P_D

°C

1.4

T_J

-55 ~ +150

T_STG

Thermal Characteristics

Parameter

Symbol

Min.

Typ.

Max.

Unit

Thermal Resistance Junction-to-Case

Thermal Resistance Junction-to-Air ^*1

R_θJC

R_θJA

°C /W

MTM0210A: October 2023 [2.0]

www.gmesemi.com

12 3 4 5 6 7

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