Datasheet > TBL3275P-3L

TBL3275P-3L

更新时间： 2024-04-09 19:00:12

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
5页	855K
描述
4A, 30V, 1W, P Channel, Power MOSFETs

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TBL3275P-3L 数据手册

P-Channel Enhancement Mode MOSFET

TBL3275P-3L

Features



Advanced trench cell design

ESD cell protected

Halogen free

Qualified to AEC-Q101 standards for high reliability

Mechanical Data



Case: SOT-23-3L

Molding Compound, UL Flammability Classification Rating 94V-0

Terminals: Matte Tin Plated Leads, Solderable Per MIL-STD-202, Method 208

SOT-23-3L

Ordering Information

Part Number

Package

Shipping

Marking Code

TBL3275P-3L

SOT-23-3L

3000pcs / Tape & Reel

(NOTE7)

Maximum Ratings (@T_A=25℃ unless otherwise specified)

Parameter

Symbol

Value

Units

Drain-to-Source Voltage

V_DSS

-30

Gate -Source Voltage

V_GSS

±20

-4

Continuous Drain Current^(NOTE1)

T_C= 25°C

I_D

T_C= 100°C

-2.0

-12.8

Pulsed Drain Current^(NOTE2)

Power Dissipation^(NOTE3)

I_DM

P_D

Thermal Characteristics

Parameter

Symbol

R_θJA

T_j

Limits

247

Unit

℃/W

℃

Thermal Resistance Junction to Ambient Air^(NOTE4)

Operating Junction Temperature Range

Storage Temperature Range

150

T_STG

-55 to +150

℃

MTM0042A

www.gmesemi.com

12 3 4 5

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