Datasheet > TBL300P10H-5DL8

TBL300P10H-5DL8

更新时间： 2024-04-09 18:58:48

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
6页	862K
描述
36A, 100V, 78W, P Channel, Power MOSFETs

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数据手册

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TBL300P10H-5DL8 数据手册

P-Channel Enhancement Mode MOSFET

TBL300P10H-5DL8

Features



Low R_DS(ON)

Low gate charge

Fast switching characteristic

Halogen free

Qualified to AEC-Q101 standards for high reliability

Mechanical Data



Case: PDFN5×6-8L



Molding Compound, UL Flammability Classification Rating 94V-0

Terminals: Matte Tin Plated Leads, Solderable Per MIL-STD-202,

Method 208

PDFN5×6-8L

Ordering Information

Part Number

Package

PDFN5×6-8L

Shipping Quantity

Marking Code

300P10H

TBL300P10H-5DL8

5000 pcs / Tape & Reel

Maximum Ratings (@ T_A= 25°C unless otherwise specified)

Parameter

Drain-to-Source Voltage

Symbol

V_DSS

V_GSS

I_D

Value

Unit

-100

±20

-36

Gate-to-Source Voltage

Continuous Drain Current (V_GS= -10V, T_C= 25°C ) ^*1

Continuous Drain Current (V_GS= -10V, T_C= 100°C ) ^*1

Continuous Drain Current (V_GS= -10V, T_A= 25°C) ^*2

Continuous Drain Current (V_GS= -10V, T_A= 70°C) ^*2

Pulsed Drain Current ^*3

I_D

-23

I_D

-7

I_D

-5.6

-144

156

I_DM

Single Pulse Avalanche Energy (L = 0.5mH)

E_AS

Thermal Characteristics

Parameter

Symbol

Value

Unit

Power Dissipation (T_C= 25°C ) ^*1

Power Dissipation (T_C= 100°C ) ^*1

Power Dissipation (T_A= 25°C ) ^*2

Power Dissipation (T_A= 70°C ) ^*2

Thermal Resistance Junction-to-Case

Thermal Resistance Junction-to-Air ^*2

Operating Junction Temperature Range

Storage Temperature Range

P_D

1.9

P_D

R_θJC

R_θJA

T_J

1.6

°C /W

°C

-55 ~ +150

T_STG

°C

MTM0855A: September 2022 [1.0]

www.gmesemi.com

12 3 4 5 6

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