Datasheet > TBL250N10D

TBL250N10D

更新时间： 2024-04-09 19:00:13

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
6页	502K
描述
42A, 100V, 83W, N Channel, Power MOSFETs

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TBL250N10D 数据手册

N-Channel Enhancement Mode MOSFET

TBL250N10D

Features



Advanced Trench Process Technology

High density cell design for ultra low on-resistance

Halogen free

Qualified to AEC-Q101 standards for high reliability

Mechanical Data



Case: TO-252

Molding Compound: UL Flammability Classification Rating 94V-0

Terminals: Matte tin-plated leads; solderability-per MIL-STD-202,

Method 208

TO-252

Ordering Information

Part Number

Package

TO-252

Shipping Quantity

Marking Code

TBL250N10D

80 pcs / Tube & 2500 pcs / Tape & Reel

250N10D

Maximum Ratings (@ T_A= 25°C unless otherwise specified)

Parameter

Drain-to-Source Voltage

Symbol

Value

Unit

V_DSS

V_GSS

100

±20

Gate-to-Source Voltage

Continuous Drain Current (T_C= 25°C )

Continuous Drain Current (T_C= 100°C )

Continuous Drain Current (T_A= 25°C )

Continuous Drain Current (T_A= 70°C )

Pulsed Drain Current ^*1

I_D

6.3

5.1

150

I_DM

Single Pulse Avalanche Energy ^*6

E_AS

Thermal Characteristics

Parameter

Symbol

Value

Unit

Power Dissipation (T_C= 25°C)

P_D

Power Dissipation (T_A= 25°C)

Thermal Resistance Junction-to-Case ^{*4, 5}

Thermal Resistance Junction-to-Air ^{*4, 5}

Operating Junction Temperature Range

Storage Temperature Range

R_θJC

R_θJA

T_J

1.5

°C /W

°C

62.5

-55 ~ +150

T_STG

°C

MTM0451A: December 2022 [2.2]

www.gmesemi.com

12 3 4 5 6

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