Datasheet > TBL120N10TB

TBL120N10TB

更新时间： 2024-04-09 19:00:19

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
5页	557K
描述
70A, 100V, 138W, N Channel, Power MOSFETs

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TBL120N10TB 数据手册

N-Channel Enhancement Mode MOSFET

TBL120N10TB

Features



Low R_DS(ON)& FOM

Extremely low switching loss

Excellent stability and uniformity

Halogen free

Qualified to AEC-Q101 standards for high reliability

Mechanical Data



Case: TO-263

Molding Compound: UL Flammability Classification Rating 94V-0

Terminals: Matte tin-plated leads; solderability-per MIL-STD-202,

Method 208

TO-263

Ordering Information

Part Number

Package

Shipping Quantity

Marking Code

120N10TB

TBL120N10TB

TO-263

50 pcs / Tube & 800 pcs / Tape & Reel

Maximum Ratings (@ T_C= 25°C unless otherwise specified)

Parameter

Drain-to-Source Voltage

Symbol

Value

Unit

V_DSS

V_GSS

I_D

100

±20

Gate-to-Source Voltage

Continuous Drain Current (T_C= 25°C ) ^*4

Continuous Drain Current (T_C= 100°C) ^*4

Pulsed Drain Current ^*3（t_p=10us）

Single Pulse Avalanche Energy ^{*3, 5}

I_D

I_DM

E_AS

211

Thermal Characteristics

Parameter

Symbol

Value

Unit

Power Dissipation (T_C= 25°C) ^*2

P_D

R_θJA

R_θJC

T_J

138

°C /W

°C

Thermal Resistance Junction-to-Air ^*1

Thermal Resistance Junction-to-Case ^*1

Operating Junction Temperature Range

Storage Temperature Range

0.9

-55 ~ +150

T_STG

°C

MTM1234A: May 2022 [2.0]

www.gmesemi.com

12 3 4 5

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