Datasheet > TBL120N03-3DL8

TBL120N03-3DL8

更新时间： 2024-04-09 18:59:19

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
5页	512K
描述
35A, 30V, 25W, N Channel, Power MOSFETs

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数据手册

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TBL120N03-3DL8 数据手册

N-Channel Enhancement Mode MOSFET

TBL120N03-3DL8

Features



Super low gate charge

Green device available

Excellent c_dV/ d_teffect decline

Advanced high cell density trench technology

Halogen free

Qualified to AEC-Q101 standards for high reliability

Mechanical Data



Case: PDFN3×3-8L

Molding Compound: UL Flammability Classification Rating 94V-0

Terminals: Matte tin-plated leads; solderability-per MIL-STD-202,

Method 208

PDFN3×3-8L

Ordering Information

Part Number

Package

PDFN3×3-8L

Shipping Quantity

Marking Code

TBL120N03-3DL8

5000 pcs / Tape & Reel

120N03

Maximum Ratings (@ T_A= 25℃ unless otherwise specified)

Parameter

Drain-to-Source Voltage

Symbol

Value

Unit

V_DSS

V_GSS

±20

Gate-to-Source Voltage

Continuous Drain Current (T_C= 25°C ) ^*1

Continuous Drain Current (T_C= 100°C) ^*1

Pulsed Drain Current ^*3

I_D

I_DM

140

Single Pulse Avalanche Energy ^*4

E_AS

Thermal Characteristics

Parameter

Symbol

Value

Unit

Power Dissipation (T_C= 25°C) ^*3

P_D

R_θJA

R_θJC

R_θJL

T_J

°C /W

°C

Thermal Resistance Junction-to-Air ^*1

Thermal Resistance Junction-to-Case ^*1

Thermal Resistance Junction-to-Lead ^*1

Operating Junction Temperature Range

Storage Temperature Range

3.8

-55 ~ +175

T_STG

°C

MTM0601A: April 2022

www.gmesemi.com

12 3 4 5

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