Datasheet > TBL1012DW

TBL1012DW

更新时间： 2024-04-09 19:00:56

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
5页	553K
描述
0.75A, 20V, 0.15W, N Channel, Small Signal MOSFETs

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TBL1012DW 数据手册

Dual N-Channel Enhancement Mode MOSFET

TBL1012DW

Features



N-Channel switch with low R_DS(on)

Operated at low logic level gate drive

JESD22-A114-B ESD rating of class 2 per human body model

Halogen free

Qualified to AEC-Q101 standards for high reliability

Typical Applications



Load/Power Switching

Interfacing Switching

Battery Management for Ultra Small Portable Electronics

Logic Level Shift

Mechanical Data



Case: SOT-363

Molding Compound: UL Flammability Classification Rating 94V-0

Terminals: Matte Tin-Plated Leads, Solderability-per MIL-STD-202, Method

208

SOT-363

Ordering Information

Part Number

Package

Shipping Quantity

Marking Code

TBL1012DW

SOT-363

3000 pcs / Tape & Reel

1012

Maximum Ratings (@ T_A= 25℃ unless otherwise specified)

Parameter

Symbol

Value

Unit

Drain-Source Voltage

Gate -Source Voltage

V_DSS

V_GSS

I_D

±1 0

0.75

0.15

Continuous Drain Current

Power Dissipation ^*1

P_D

Thermal Characteristics

Parameter

Symbol

Value

Unit

Thermal Resistance Junction-to-Air ^*1

Operating Junction Temperature Range

Storage Temperature Range

R_θJA

T_J

833

°C /W

°C

-55 ~ +150

T_STG

°C

MTM0150A: February 2023 [2.1]

www.gmesemi.com

12 3 4 5

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