Datasheet > TBL090P02-3DL8

TBL090P02-3DL8

更新时间： 2024-04-09 18:59:59

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
5页	598K
描述
35A, 20V, 40W, P Channel, Power MOSFETs

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TBL090P02-3DL8 数据手册

P-Channel Enhancement Mode MOSFET

TBL090P02-3DL8

Features



Super low gate charge

Green device available

Excellent c_dV/ d_teffect decline

Advanced high cell density trench technology

Halogen free

Qualified to AEC-Q101 standards for high reliability

Mechanical Data



Case: PDFN3×3-8L

Molding Compound: UL Flammability Classification Rating 94V-0

Terminals: Matte tin-plated leads; solderability-per MIL-STD-202,

Method 208

PDFN3×3-8L

Ordering Information

Part Number

Package

Shipping Quantity

Marking Code

TBL090P02-3DL8

PDFN3×3-8L

5000 pcs / Tape & Reel

090P02

Maximum Ratings (@ T_C= 25°C unless otherwise specified)

Parameter

Drain-to-Source Voltage

Symbol

Value

Unit

V_DSS

V_GSS

-20

Gate-to-Source Voltage

±12

Continuous Drain Current

-50

(T_C= 25°C , V_GS= -4.5V, Silicon limited)

Continuous Drain Current

I_D

-35

(T_C= 25°C , Package limited)

Pulsed Drain Current ^*2

I_DM

-150

Thermal Characteristics

Parameter

Symbol

Value

Unit

Power Dissipation (T_C= 25°C)

P_D

R_θJC

T_J

°C /W

°C

Thermal Resistance Junction-to-Case ^*1

Operating Junction Temperature Range

Storage Temperature Range

3.1

-55 ~ +150

T_STG

°C

MTM0560A: April 2021

www.gmesemi.com

12 3 4 5

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